Effect of Rapid Thermal Annealing on Resistive Switching Uniformity of HfAlOx Based RRAM Devices

Li Feng Liu; Wei Bing Zhang; Yi Ran Wang; Wen Jia Ma; Guo Hui Wang; Bing Sun; Sheng Kai Wang; Hong Gang Liu

doi:10.4028/www.scientific.net/AMM.665.136

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 665Effect of Rapid Thermal Annealing on Resistive...

Effect of Rapid Thermal Annealing on Resistive Switching Uniformity of HfAlO_x Based RRAM Devices

Abstract:

HfAlO_x based RRAM devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO₂ and Al₂O₃. The effect of rapid thermal annealing (RTA) on the resistive switching uniformity of HfAlOx based RRAM devices was investigated. Compared to the as-deposited devices, the resistive switching uniformity of HfAlO_x based RRAM devices after RTA treatment are remarkably improved. The uniformity improvement of HfAlO_x based RRAM after RTA treatment is related to microstructure change in the resistive switching film.

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Periodical:

Applied Mechanics and Materials (Volume 665)

Pages:

136-139

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.665.136

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Online since:

October 2014

Authors:

Li Feng Liu*, Wei Bing Zhang, Yi Ran Wang, Wen Jia Ma, Guo Hui Wang, Bing Sun, Sheng Kai Wang, Hong Gang Liu

Keywords:

Annealing, HfAlO_x, Oxide, RRAM, Uniformity

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* - Corresponding Author

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