A CMOS Bandgap Reference with Temperature Compensation

Xi Chen; Liang Li; Xing Fa Huang; Xiao Feng Shen; Ming Yuan Xu

doi:10.4028/www.scientific.net/AMM.667.401

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 667A CMOS Bandgap Reference with Temperature...

A CMOS Bandgap Reference with Temperature Compensation

Abstract:

This paper has presented a bandgap reference circuit with high-order temperature compensation. The compensation technique is achieved by using MOS transistor operating in sub-threshold region for reducing high-order TC of V_be. The circuit is designed in 0.18¦Ìm CMOS process. Simulation results show that the proposed circuit achieves 4.2 ppm/¡æ with temperature from-55 to 125 ¡æ, which is only a third than that of first-order compensated bandgap reference.