The Optical Properties of Doped Silicon Nanotubes

Abstract:

We perform the first-principles calculations within the framework of density functional theory to determine the electronic structure and optical properties of P-doped and B-doped silicon nanotubes. The results indicate that the electronic structure and optical properties of P-doped and B-doped silicon nanotubes are sensitive to the impurity composition. In particular, when doped with P or B, obviously the band gap decreases and the conductivity enhanced, the P-doped and B-doped silicon nanotubes displays a closer band structure and the unit cell volume of doped silicon nanotubes increased than before doping, the change depends on the doping charge and Si-Si bond length dSi-Si. Moreover, the dielectric constant decreases and increased when doped P and B, the optical absorption peak obviously has a blue shift and red shift respectively. The calculated results provide important theoretical guidance for the applications of Uv detector and the solar cell in optical detectors.

• Periodical: Applied Mechanics and Materials (Volume 722)
• Pages: 14-17
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.722.14
• Online since: December 2014
• Authors: Chun Ya Luo, Zhi Gao Lan*, Jie Feng, M.Z. Hu, Zhen Xun Fu
• Keywords: First-Principles, Optical Property, Silicon Nanotubes

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