Research on some Key Mechanical Properties of Silicon Nitride Thin Films Deposited by PECVD

Abstract:

The purpose of this work is to study the mechanical characteristics of the silicon nitride(SiN_x) thin films prepared by PECVD technique, some researches as follows were carried out. First, the SiNx thin films were deposited on the two different substrates. Then, the atomic force microscope (AFM) was adopted to test the surface quality of the SiN_x films, and the scanning electron microscope (SEM) was used to test the section morphology of the SiN_x thin films. Finally, the rotating beam structures was applied to measure the residual stress in the SiNx films. The SiN_x thin films with low stress can be fabricated through PECVD, in which the surface roughness values(Ra) are 1.261 nm and 2.383nm, and the residual stress is 43.5 kPa. Therefore, the SiN_x thin films deposited by PECVD are suitable for the preparation of device dielectric films in MEMS.

• Periodical: Applied Mechanics and Materials (Volume 742)
• Pages: 773-777
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.742.773
• Online since: March 2015
• Authors: Qun Feng Yang, Jian Yi Zheng*, Jun Qing Wang, Jun Hui Lin, Xue Nan Zhao, Gao Feng Zheng
• Keywords: PECVD, Residual Stress, Silicon Nitride(SiN_x) Thin Films

References

[1] Y. Jinsu, S.K. Dhungel, and J. Yi: Thin Solid Films. Vol. 515 (2007), p.5000.

[2] Ruiwen L., Binbin J., Yi O., and Dapeng C.: Journal of Functional Materials. Vol. 41 (2010), p.1907. (In Chinese).

[3] H. Huang, K.J. Winchester, A. Suvorova, B.R. Lawn, Y. Liu, X.Z. Hu, J.M. Dell, and L. Faraone: Materials Science and Engineering A 435~436 (2006), p.453.

DOI: 10.1016/j.msea.2006.07.015

[4] H. Takao, T. Ichikawa, T. Nakata, K. Sawada, and M. Ishida: IEEE 21st International Conference on Micro Electro Mechanical Systems. (2008), p.359.

DOI: 10.1109/memsys.2008.4443667

[5] Dong Z., Xiangdong X., Zhi W., Xiaomei W., and Yadong J.: Acta Optica Sinica. Vol. 30 (2010), p.2782. (In Chinese).

[6] H. Yamazaki, Y. Ishikawa, Y. Ueoka, M. Fujiwara, E. Takahashi, Y. Andoh, and Y. Uraoka: 20th International Workshop on Active-Matrix Flatpanel Displays and Devices. (2013), p.43.

[7] Xiaosong W., Xuening C., and Yupeng L.: Journal of Synthetic Crystals. Vol. 43 (2014), p.1913. (In Chinese).

[8] Ying Y., Zongzi L., and Xinqiao W.: Vacuum Science and Technology(CHINA). Vol. 24 (2004), p.306. (In Chinese).

[9] Qingxin W., Guanghong C., Ying Y., and Zhongzi L.: Journal of Functional Materials. Vol. 38 (2007), p.703. (In Chinese).

[10] Chao X., Yongqing X., and Zhi Y.: Micronanoelectronic Technology. Vol. 51 (2014), p.194. (In Chinese).

[11] Danqing X., and Ying Y.: Journal of Fuzhou University(Natural Science Edition). Vol. 37 (2009), p.50. (In Chinese).

[12] Hui X., Yong X., Xinlong W., and Zhao C.: Insulating Materials. Vol. 47 (2014), p.8. (In Chinese).

[13] Cheng W., Guiyan Z., Ying M., Mengchao X., and Longsheng Q.: Laser & Optoelectronics Progress. Vol. 41 (2004), p.28. (In Chinese).

[14] Xin Z., Tongyi Z., and Z. Yitshak: Thin Solid Films. Vol. 335 (1998), p.97.