Influence of Oxygen Flow Rate on the Characteristics of the Tungsten Oxide Using RF Magnetron Sputtering

Abstract:

—Tungsten Oxide (WO3) thin films were deposited using 99.9% pure tungsten target onto ITO substrate using RF magnetron sputtering in the range oxygen flow rates of 30-50%. The influence of the oxygen flow rate on characteristic of WO3 thin films has been investigated. The transmittance, resistivity, crystallite, roughness, and surface morphology were measured by UV-Vis, 2-point probe, X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), and Field Emission Scanning Electron Microscopy (FE-SEM) respectively. Experimental result showed that the deposition rate of WO3 thin films decreased by increasing oxygen flow rate. A poor crystalinity or more too amorphous of WO3 thin films produces by using various oxygen content. A higher optical transmittance spectrum detected at 30% oxygen content about 86% at wavelength 550nm. Keywords—Tungsten Oxide (WO3); RF sputtering, sputtering oxygen

• Periodical: Applied Mechanics and Materials (Volumes 773-774)
• Pages: 657-661
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.773-774.657
• Online since: July 2015
• Authors: S.A. Abdullah*, Nafarizal Nayan, Mohd Zainizan Sahdan
• Keywords: RF Sputtering, Sputtering Oxygen, Tungsten Oxide (WO3)

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