A Study on Scalability and Variation of CMOS Low Noise Amplifier in Advance CMOS Technology Processes

Dayang Nur Salmi Dharmiza Awang Salleh; Rohana Sapawi

doi:10.4028/www.scientific.net/AMM.833.135

Paper Titles

Electrical Resistivity of Cement Based Materials
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Design and Analysis of CMOS Linear Feedback Shift Registers for Low Power Application
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Soft Error Mitigation on Dual Rail Latch
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Implementation of a Test Bed for Supercapacitor Testing and Evaluation
p.126

A Study on Scalability and Variation of CMOS Low Noise Amplifier in Advance CMOS Technology Processes
p.135

Design of Integrated Open Loop Resonator Bandpass Filter Antenna for 2.4GHz Applications
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Design and Implementation of an Efficient Hybrid Parallel-Prefix Ling Adder Using 0.18micron CMOS Technology in Standard Cell Library
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Satellite Image Segmentation with the Application of PSO Algorithm
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Elliptic Filter and Iterative Inversion Method for Buried Object Detection Applications
p.164

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 833A Study on Scalability and Variation of CMOS Low...

A Study on Scalability and Variation of CMOS Low Noise Amplifier in Advance CMOS Technology Processes

Abstract:

Recent technology requires multistandard Radio Frequency (RF) chips for multipurpose wireless applications. In RF circuits, a low-noise amplifier (LNA) plays the key role in determining the receiver’s performance. With CMOS technology scaling, various designs has been adopted to study circuit’s characteristic and variation. In this paper, we present the results of scalable wideband LNA design based on complementary metal oxide semiconductor (CMOS), with its variance study. The design was fabricated in 180nm, 90nm, 65nm and 40nm CMOS technology.