1064 nm High-Power Broad Area Semiconductor Lasers with Electrode Pattern

Abstract:

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According to the principle of carrier diffusion, aluminum nitride (AlN) coating, and RIE deep etching technology are implemented, 1064 nm broad area distribution electrode lasers have been obtained exhibiting near single lobe near and far field. We report electrode pattern lasers emitting at 1064 nm with the minimal full width at half maximum (FWHM) horizontal angle of 2.7° while the maximum continuous-wave output power up to 3.65 W and slope efficiencies as high as 0.85 W/A.

Info:

Periodical:

Edited by:

Aimin Yang, Jingguo Qu and Xilong Qu

Pages:

590-593

DOI:

10.4028/www.scientific.net/AMM.84-85.590

Citation:

Z. L. Qiao et al., "1064 nm High-Power Broad Area Semiconductor Lasers with Electrode Pattern", Applied Mechanics and Materials, Vols. 84-85, pp. 590-593, 2011

Online since:

August 2011

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Price:

$35.00

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