1064 nm High-Power Broad Area Semiconductor Lasers with Electrode Pattern

Abstract:

According to the principle of carrier diffusion, aluminum nitride (AlN) coating, and RIE deep etching technology are implemented, 1064 nm broad area distribution electrode lasers have been obtained exhibiting near single lobe near and far field. We report electrode pattern lasers emitting at 1064 nm with the minimal full width at half maximum (FWHM) horizontal angle of 2.7° while the maximum continuous-wave output power up to 3.65 W and slope efficiencies as high as 0.85 W/A.

• Periodical: Applied Mechanics and Materials (Volumes 84-85)
• Pages: 590-593
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.84-85.590
• Online since: August 2011
• Authors: Zhong Liang Qiao, Si Yu Zhang, Xin Gao, Peng Lu, Hui Li, Yi Qu, Guo Jun Lui, Bao Xue Bo
• Keywords: Broad Area Semiconductor Lasers, Distribution Electrode, Photon Gain

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