Research of Angled 8° Integrated 808 nm Wavelength SLDs

Si Yu Zhang; Zhong Liang Qiao; Bao Xue Bo; Xin Gao; Yi Qu; Peng Lu; Hui Li; Guo Jun Liu

doi:10.4028/www.scientific.net/AMM.84-85.598

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 84-85Research of Angled 8° Integrated 808 nm Wavelength...

Research of Angled 8° Integrated 808 nm Wavelength SLDs

Abstract:

Integrated 808 nm wavelength super-luminescent diodes (SLDs) with a ring seed source and a tapered amplifier were fabricated tilted at 8° from the facet normal. Max-output power of 700 mW was obtained in continuous wave (CW) mode under room temperature, and the full width at half maximum (FWHM) of the emission spectrum is 36 nm.

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Periodical:

Applied Mechanics and Materials (Volumes 84-85)

Pages:

598-602

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.84-85.598

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Online since:

August 2011

Authors:

Si Yu Zhang, Zhong Liang Qiao, Bao Xue Bo, Xin Gao, Yi Qu, Peng Lu, Hui Li, Guo Jun Liu

Keywords:

Ring Laser, Super-Luminescent Diodes, Tapered Amplifier

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