808 nm Semiconductor Lasers with Tailored Gain for Mode Shape

Abstract:

We implement the concept of the distributed electrode, which allows to improve the modal behavior of lasers and to reduce spatial-hole burning effects by preferentially localizing current injection in the center of the structure, hence discriminating the optical mode. We report the first realization of distributed electrode lasers emitting at 808 nm with the measured full width at half maximum (FWHM) angle of the minimal horizontal angle as 3.8° while the maximum continuous-wave output power is up to 4 W and high slope efficiencies as high as 0.95 W/A.

• Periodical: Applied Mechanics and Materials (Volumes 84-85)
• Pages: 603-606
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.84-85.603
• Online since: August 2011
• Authors: Zhong Liang Qiao, Bao Xue Bo, Si Yu Zhang, Xin Gao, Peng Lu, Hui Li, Yi Qu, Guo Jun Liu
• Keywords: Gaussian Distribution, Laser Beam Steering, Laser Mode, Self-Focusing, Semiconductor Lasers, Spatial Filter

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