808 nm Semiconductor Lasers with Tailored Gain for Mode Shape

Abstract:

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We implement the concept of the distributed electrode, which allows to improve the modal behavior of lasers and to reduce spatial-hole burning effects by preferentially localizing current injection in the center of the structure, hence discriminating the optical mode. We report the first realization of distributed electrode lasers emitting at 808 nm with the measured full width at half maximum (FWHM) angle of the minimal horizontal angle as 3.8° while the maximum continuous-wave output power is up to 4 W and high slope efficiencies as high as 0.95 W/A.

Info:

Periodical:

Edited by:

Aimin Yang, Jingguo Qu and Xilong Qu

Pages:

603-606

DOI:

10.4028/www.scientific.net/AMM.84-85.603

Citation:

Z. L. Qiao et al., "808 nm Semiconductor Lasers with Tailored Gain for Mode Shape", Applied Mechanics and Materials, Vols. 84-85, pp. 603-606, 2011

Online since:

August 2011

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Price:

$35.00

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