Anomalous Magneto-Electric Properties in Chalcopyrite MnGeP₂ Films

Abstract:

We have successfully grown MnGeP₂ thin films and Ge and MnGeP₂ alloy films on GaAs(100) substrate. Magnetization measurements have been performed on MnGeP₂ film samples at temperatures from 5 to 400 K. The measurements have shown that there are a ferromagnetic to paramagnetic transition above room temperature. Field dependent magnetization experiments have shown a coercive field of 160, 1400, 3900 Oe at 300, 250 and 5 K, respectively. A negative magnetoresistance (MR) has been found with a maximum change less than 2% at 5 T and 5 K. The MR measurements on the films have displayed hysteric behaviors with respect to the external field sweep at low fields at temperature below the ferromagnetic transition. Anomalous Hall effects have been found in the MnGeP₂ film and Ge and MnGeP₂ alloy film samples. Above the transition temperature neither hysteric behavior nor anomalous Hall effect was found. These results imply that spin polarized hole carriers exist in the MnGeP₂ films.

• Periodical: Applied Mechanics and Materials (Volume 864)
• Pages: 111-115
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.864.111
• Online since: April 2017
• Authors: Yun Ki Kim*, J.B. Ketterson
• Keywords: Anomalous Hall Effect, Magnetoresistance Hysteresis, MnGeP₂

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