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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 864Magnetotransport Properties of MnGeAs2 Films

Magnetotransport Properties of MnGeAs₂ Films

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Abstract:

MnGeAs₂ thin films were successfully deposited on GaAs(100) substrate. The films exhibited room-temperature ferromagnetism with T_C~ 330 K, based on both magnetization and resistance measurements at temperatures from 5 to 370 K. The coercive fields at 5 and 300 K were 2100 and 50 Oe. The anomalous Hall effect was observed, suggesting the existence of spin polarized carriers in MnGeAs₂ thin films. The magnetoresistance (MR) measurements showed very small change (~ 0.1% at 5 K) in resistance at low temperature. The MR value at 5 K was smaller than that (~ 9% at 305 K) at room temperature (305 K). Type of majority carriers in the films was determined to be n-type by Hall measurement above the transition temperature. The effective carrier density was 1.8´10²⁰ cm^-3. The diode current-voltage characteristics were shown in a hetero-junction MnGeAs₂ film on a conducting p-type GaAs substrate.

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Applied Mechanics and Materials (Volume 864)

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116-120

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https://doi.org/10.4028/www.scientific.net/AMM.864.116

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Online since:

April 2017

Authors:

Yun Ki Kim*, J.B. Ketterson

Keywords:

Anomalous Hall Effect, Ferromagnetism, MnGeAs₂

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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