The Effect of Annealing Temperature on Structure of TiCrN Thin Film Deposited by DC Magnetron Sputtering Method

Abstract:

The DC reactive magnetron sputtering method was employed to deposit Titanium Chromium Nitride (TiCrN) thin film on silicon (100) substrates. The coatings were annealed at different temperature from 700°C to 1000°C with increase step of 100 °C in air for 2 h. The crystal structure, surface morphologies, microstructure and chemical compositions were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDX). The x-ray patterns confirmed the TiO₂ rutile structure with strong preferred orientation of (101) plane was appeared from 700°C. The crystallinity of film increased with the annealing temperatures. The lattice constant (a and c) were in the range of 4.565 – 4.607 Å and 2.946 – 2.956 Å. The void between grain boundaries was confirmed by FE-SEM micrograph. The cross-sectional analysis revealed that the porous structure with enhancement of thickness from 1.64 - 1.95 μm were obtained as increase annealing temperatures. The EDX results indicated that the O content increase from 0 – 60.67 At% whereas the Ti, Cr, and N contents were decreased from 43.26 - 22.40 At%, 20.65 – 2.57 At% and 51.19 – 14.36 At% through the annealing temperatures.

• Periodical: Applied Mechanics and Materials (Volume 901)
• Pages: 31-36
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.901.31
• Online since: August 2020
• Authors: Adisorn Buranawong*, Nirun Witit-Anun
• Keywords: Annealing Temperature, DC Magnetron Sputtering, TiCrN

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