Transient Photoelectrochemical Analysis of the Semiconductor Properties of Oxide Films on Alloys

Yu Tan; Wan Wan Wang; Sheng Han Zhang; Ke Xin Liang

doi:10.4028/www.scientific.net/AMR.1015.513

Paper Titles

Solvent-Free Oxidation of Benzyl Alcohol by 30% H₂O₂ over LDH Hosted Chromium Complex
p.497

Study on Nano-Hydroxyapatite Assisted Preparing by Ionic Liquids
p.501

Cyclic Oxidation Resistance of Co-10Cr-5Al-0.3Y Alloy at 800 ^oc
p.505

Study on Kinetics of Nano-Ni(OH)₂Powder Ethanol Desorption Process
p.509

Transient Photoelectrochemical Analysis of the Semiconductor Properties of Oxide Films on Alloys
p.513

The Influence of Donor-Doped Content on PTCR Effect of (Ba_1-_xSm_x)TiO₃ Based Ceramics Prepared by the Reduction Sintering-Reoxidation Method
p.517

First Principles Study on Adsorption for Different Concentration of H₂S on Fe(100)
p.521

The Plasma Treatment Influence on the Adhesive Wafer Bonding by the PDAP
p.526

Interaction between Enrofloxacin and the Extracellular Polymeric Substances from Platymonas Subcordiformis
p.531

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1015Transient Photoelectrochemical Analysis of the...

Transient Photoelectrochemical Analysis of the Semiconductor Properties of Oxide Films on Alloys

Abstract:

A transient photoelectrochemical analysis method is improved to investigate the semiconductor properties of oxide films on stainless steel 316L oxidized in high-temperature water. A minute amount of ZnO was added to the high-temperature water environment to alter the semiconductor properties of the oxide film deposited on stainless steel 316L. Characteristic phases in the oxide were investigated using the improved photoelectrochemical analysis method, and the semiconductor properties of the oxide film on stainless steel 316L suggested the presence of an n-type semiconductor. The photoelectrochemical dephasing angle showed movement of the flat band potential in the negative direction after ZnO addition.

You might also be interested in these eBooks

Chemical Engineering and Material Properties III

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 1015)

Pages:

513-516

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1015.513

Citation:

Cite this paper

Online since:

August 2014

Authors:

Yu Tan*, Wan Wan Wang, Sheng Han Zhang, Ke Xin Liang

Keywords:

High Temperature Water, Oxide Film, Photoelectrochemistry, Semiconductor Property, Stainless Steel 316L

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] J. Hou, Q.J. Peng, K. Sakaguchi, Y. Takeda, J. Kuniya and T. Shoji: Corros. Sci. Vol. 52 (2010), p.1098.

Google Scholar

[2] R. B, Break and Z. Szklarska-Smialowska: Corros. Sci. Vol. 38 (1996), p.971.

Google Scholar

[3] Y. S. Lim, J. S. Kim and H. S. Kwon: J. Nucl. Mater. Vol. 336 (2005), p.65.

Google Scholar

[4] C. Sunseri, S. Piazza and A. Di Paola: J. Electrochem. Soc. Vol. 134 (1987), p.2410.

Google Scholar

[5] R. Babic and M. Metikos-Hukovic: J. Electroanal. Chem. Vol. 358 (1993), p.143.

Google Scholar

[6] S. P. Harrington, F. Wang and T. M. Devine: Electrochim. Acta Vol. 55 (2010), p.4092.

Google Scholar

[7] D. Kong, S. Chen and C. Wang: Corros. Sci. Vol. 45 (2003), p.747.

Google Scholar

[8] S. Piazza, M. Sperandeo, C. Sunseri and F. Di Quarto: Corros. Sci. Vol. 46 (2004), p.831.

Google Scholar

[9] D. P. Agatino: Corros. Sci. Vol. 31 (1991), p.739.

Google Scholar

[10] H. J. Jang, C. J. Park and H. S. Kwon: Electrochim. Acta Vol. 50 (2005), p.16.

Google Scholar

[11] S. Fujimoto, O. Chihara and T. Shibata: Mater. Sci. Forum Vol. 289-292 (1998), p.989.

Google Scholar

[12] H. Tsuchiya, S. Fujimoto, O. Chihara and T. Shibata: Electrochim. Acta Vol. 47 (2002), p.4357.

Google Scholar

[13] Y. Tan, S. Zhang and K. Liang: Int. J. Electrochem. Sci. Vol. 9 (2014), p.728.

Google Scholar

[14] N.F. Mott and E.A. Davis: Electronic Processes in Non-crystalline Materials 2ed. (Clarendon Press, Oxford 1979).

Google Scholar

[15] S. Zhang, Y. Tan and K. Liang: J. Nucl. Mater. Vol. 434 (2013), p.43.

Google Scholar

[16] L. Marchetti, S. Perrin, Y. Wouters, F. Marin and M. Pijolat: Electrochim. Acta Vol. 55 (2010), p.5384.

Google Scholar