Transient Photoelectrochemical Analysis of the Semiconductor Properties of Oxide Films on Alloys
A transient photoelectrochemical analysis method is improved to investigate the semiconductor properties of oxide films on stainless steel 316L oxidized in high-temperature water. A minute amount of ZnO was added to the high-temperature water environment to alter the semiconductor properties of the oxide film deposited on stainless steel 316L. Characteristic phases in the oxide were investigated using the improved photoelectrochemical analysis method, and the semiconductor properties of the oxide film on stainless steel 316L suggested the presence of an n-type semiconductor. The photoelectrochemical dephasing angle showed movement of the flat band potential in the negative direction after ZnO addition.
Z.S. Liu, L.P. Xu, X.D. Liang, Z.H. Wang and H.M. Zhang
Y. Tan et al., "Transient Photoelectrochemical Analysis of the Semiconductor Properties of Oxide Films on Alloys", Advanced Materials Research, Vol. 1015, pp. 513-516, 2014