Chemical Mechanical Polishing of Soft-Brittle Cadmium Zinc Telluride Wafers Using a Developed Environment-Friendly Solution

Zhen Yu Zhang; Bo Wang; Ya Xing Song

doi:10.4028/www.scientific.net/AMR.1017.720

Paper Titles

Monitoring of Wear Land Width of Diamond Tool Cutting Edge with Large Nose Radius in Ultra-Precision Cutting Using Static Cutting Forces
p.696

Future Prospects for CMP Equipment - Design Considerations According to Substrate Size and Shape
p.705

Measuring Surface Topography of a Diamond Wire Using an Image Processing Method
p.709

Effect of Surface Profile on the Material Removal Rate Distribution in CMP Process
p.715

Chemical Mechanical Polishing of Soft-Brittle Cadmium Zinc Telluride Wafers Using a Developed Environment-Friendly Solution
p.720

Effectiveness Evaluation of Novel Pad Dressing Method by Flexible Fiber Dresser - Tool Life Evaluation of Flexible Fiber Dresser
p.726

Numerical Investigations on the Grinding Forces in Ultrasonic Assisted Grinding of SiC Ceramics by Using SPH Method
p.735

The Influence of Amplitude on Grinding Force and Surface Roughness in Ultrasonic Assisted Grinding of K9 Glass
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High-Speed Capturing of Stress Distribution of Workpiece under Ultrasonically Assisted Cutting Condition
p.747

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1017Chemical Mechanical Polishing of Soft-Brittle...

Chemical Mechanical Polishing of Soft-Brittle Cadmium Zinc Telluride Wafers Using a Developed Environment-Friendly Solution

Abstract:

A novel chemical mechanical polishing (CMP) solution was developed. The CMP solution developed consisted of mainly silica, hydrogen peroxide, and malic acid. CMP solution is environment-friendly, which is different from those used in conventional CMP, consisting of acids or organic solvents. Fixed abrasive waterproof paper of alumina with mesh size of 3000 was used as lapping tool, to avoid embedding of free abrasives on soft cadmium zinc telluride (CdZnTe or CZT) surfaces employed in traditional lapping processes. The diameter of silica was varied from several tens of nanometers to 100 nanometers. Surface roughness Ra, and PV achieved using fixed abrasive lapping and developed CMP solution are 0.6 nm and 6.3 nm, respectively. The polished CZT surface was cleaned by deionized water and dried using compressed air, to avoid damages induced by conventional physical wiping and ultrasonic cleaning on soft-brittle CZT wafers.

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Periodical:

Advanced Materials Research (Volume 1017)

Pages:

720-725

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1017.720

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Online since:

September 2014

Authors:

Zhen Yu Zhang*, Bo Wang, Ya Xing Song

Keywords:

Cadmium Zinc Telluride, Chemical Mechanical Polishing, Soft-Brittle Wafer, Surface Profilometer, Transmission Electron Microscopy

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