Lapping and Polishing of Sapphire Wafer with Fixed Abrasive Pad

Jian Bin Wang; Yong Wei Zhu; Jun Xu; Zhan Kui Wang; Ji Hua Miao

doi:10.4028/www.scientific.net/AMR.1027.68

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1027Lapping and Polishing of Sapphire Wafer with Fixed...

Lapping and Polishing of Sapphire Wafer with Fixed Abrasive Pad

Abstract:

The processing technology of sapphire with a high material removal rate a good surface quality is critical for its applications. The experiment of sapphire lapping and polishing was carried out by using three different fixed abrasive pad (FAP). Their material removal rate (MRR) and surface roughness (Ra) were measured and analyzed. Results indicate that a MRR of 5.6μm/min reaches in rough lapping and a MRR of 0.4μm/min in fine lapping. The average surface roughness Ra of rough lapping and fine lapping is 142nm and 1.2nm respectively. The processing efficiency of sapphire wafer is effectively improved and a good surface quality is obtained when FAP adopted.

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Periodical:

Advanced Materials Research (Volume 1027)

Pages:

68-71

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1027.68

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Online since:

October 2014

Authors:

Jian Bin Wang, Yong Wei Zhu*, Jun Xu, Zhan Kui Wang, Ji Hua Miao

Keywords:

Fixed Abrasive Pad, Lapping, Polishing, Sapphire Wafer

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References

[1] Akselrod M S, Bruni F J: Journal of Crystal Growth, 2012, 360: 134-145.

Google Scholar

[2] Wang Y, Liu S, Peng G, Zhou S, Xu J: Journal of crystal growth, 2005, 274(1): 241-245.

Google Scholar

[3] Hader B, Weis O: Surface Science, 1989, 220(1): 118-130.

Google Scholar

[4] Zhang Z, Liu W, Song Z, Hu X: Journal of the Electrochemical Society, 2010, 157(6): H688-H691.

Google Scholar

[5] Zhu H, Tessaroto L A, Sabia R, Greenhut, V A, Smith M, Niesz D: Applied Surface Science, 2004, 236(1): 120-130.

DOI: 10.1016/j.apsusc.2004.04.027

Google Scholar

[6] Lv B H, Yuan J L, Yao Y X, Wang Z W: Materials Science Forum. 2006, 532: 460-463.

Google Scholar

[7] Kim H M, Manivannan R, Moon D J, Xiong H, Park J G: Wear, 2013, 302(1): 1340-1344.

Google Scholar

[8] Vovk E A, Budnikov A T, Dobrotvorskaya M V, Krivonogov S I, Danko A Y: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2012, 6(1): 115-121.

DOI: 10.1134/s1027451012020188

Google Scholar

[9] Zhu H, Niesz D E, Greenhut V A, Sabia R: Journal of materials research, 2005, 20(2): 504-520.

Google Scholar