Microstructural Characterization of 3C-SiC Layers, Grown Epitaxially on 4H-SiC Substrates by CVD

Efstathios K. Polychroniadis; Mamour Sall; N. Chandran

doi:10.4028/www.scientific.net/AMR.1096.22

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Microstructural Characterization of 3C-SiC Layers, Grown Epitaxially on 4H-SiC Substrates by CVD

Abstract:

This work was performed on 3C-SiC layers grown on 4H-SiC substrates by chemical vapour deposition after a surface pre-treatment using GeH₄ gas. By means of TEM, the effects of different GeH₄ fluxes in the 3C layer quality has been studied and compared. An optimal GeH₄ flux permits to drastically reduce twin boundaries but another type of defect occurs and has been widely studied in this paper.

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Advanced Materials Research (Volume 1096)

Pages:

22-26

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1096.22

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Online since:

April 2015

Authors:

Efstathios K. Polychroniadis*, Mamour Sall, N. Chandran

Keywords:

Defect, Silicon Carbide (SiC), TEM, Twin

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* - Corresponding Author

References

[1] W.E. Nelson, F.A. Halden, A. Rosengreen, Growth and Properties of β‐SiC Single Crystals, Journal of Applied Physics, 37 (1966) 333-336.

DOI: 10.1063/1.1707837

Google Scholar

[2] H. Nagasawa, M. Abe, K. Yagi, T. Kawahara, N. Hatta, Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects, physica status solidi (b), 245 (2008) 1272-1280.

DOI: 10.1002/pssb.200844053

Google Scholar

[3] Y.H. Zhu, J.C. Zhang, Z.T. Chen, T. Egawa, Demonstration on Gan-based light-emitting diodes grown on 3C-SiC/Si(111), J. of Appl. Phys., 106 (2009) 124506.

DOI: 10.1063/1.3273311

Google Scholar

[4] A. Severino, C. Locke, R. Anzalone, M. Camarda, N. Piluso, A.L. Magna, S. Saddow, G. Abbondanza, G. D'Arrigo, F.L. Via, Growth of wide bandgap materials, ECS Trans., 35 (2011) 99.

DOI: 10.1149/1.3570851

Google Scholar

[5] K. Nishino, T. Kimoto, H. Matsunami, Reduction of Double Positioning Twinning in 3C-SiC Grown on 4H-SiC Substrates, Japanese Journal of Applied Physics, 36 5202.

DOI: 10.1143/jjap.36.5202

Google Scholar

[6] M.V.S. Chandrashekhar, C.I. Thomas, J. Lu, M.G. Spencer, Electronic properties of a 3C∕4H SiC polytype heterojunction formed on the Si face, Applied Physics Letters, 90 (2007).

DOI: 10.1063/1.2730738

Google Scholar

[7] M. Soueidan, G. Ferro, O. Kim-Hak, F. Cauwet, B. Nsouli, Vapor–Liquid–Solid Growth of 3C-SiC on α-SiC Substrates. 1. Growth Mechanism, Crystal Growth & Design, 8 (2008) 1044-1050.

DOI: 10.1021/cg070499+

Google Scholar

[8] K. Alassaad, M. Vivona, V. Soulière, B. Doisneau, F. Cauwet, D. Chaussende, F. Giannazzo, F. Roccaforte, G. Ferro, Ge mediated surface preparation for twin free 3C-SiC nucleation and growth on low off-axis 4H-SiC substrate, ECS J. Solid State Sci. Technol., 8 (2014).

DOI: 10.1149/2.0121408jss

Google Scholar

[9] K. Alassaad, V. Soulière, B. Doisneau, F. Cauwet, H. Peyre, D. Carole, D. Chaussende, G. Ferro, Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate, Materials Science Forum, 778-780 (2014) 187.

DOI: 10.4028/www.scientific.net/msf.778-780.187

Google Scholar

[10] M. Sall, N. Chandran, A. Terzidou, C. Lioutas, E.K. Polychroniadis, TEM characterization of a complex twinning system in 3C- SiC, Submitted for publication in Springer Proceedings in Physics, (2014).

DOI: 10.1007/978-3-319-16919-4_4

Google Scholar