ArF Excimer Laser Assisted Solution Based Metal Induced Crystallization of Amorphous Silicon Films

Abstract:

Amorphous silicon films with and without spin-coating aluminum-salt-solution are treated by 193nm ArF excimer laser with different laser energies. It is observed that the crystalline fraction increases along with the laser energy. By comparation, with the help of Al, higher crystalline volume fraction and lower in-plane stress can be achieved at the same laser energy (2.9mJ). Large grain size of 200~300nm and maximum crystalline fraction of 82.3% are obtained in Al-salt-solution spin-coated sample, which is treated with laser energy of 3.2mJ,and its carrier mobility is 56.3cm²/Vs.

• Periodical: Advanced Materials Research (Volume 1096)
• Pages: 45-49
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1096.45
• Online since: April 2015
• Authors: Wen Yun Dai, Jing Jin*, Chao Xian Hui, Can Liu, Zhi Jun Yuan, Wei Min Shi
• Keywords: A-Si, Crystallization, Excimer Laser, Poly-Si

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