Structural and Electrical Properties of Hydrothermal Growth ZnO Nanorods

Kai Loong Foo; U. Hashim; Chun Hong Voon; M. Kashif

doi:10.4028/www.scientific.net/AMR.1109.104

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1109Structural and Electrical Properties of...

Structural and Electrical Properties of Hydrothermal Growth ZnO Nanorods

Abstract:

ZnO nanorods, type of the metal-oxide semiconductor deposited on interdigitated electrode (IDE) substrate using hydrothermal growth technique. The growth ZnO nanorods was annealed in furnace at 500°C for 2 hours as to obtain highly crystallite of ZnO nanorods. XRD pattern indicated the synthesized ZnO nanorods have preferred orientation along the (002) plane. Moreover, FESEM images showed that the nanorods with the size less than 60 nanometer were successfully synthesized using hydrothermal growth technique. The investigation on optical properties using UV-Vis-NIR spectrophotometer confirmed ZnO is classified as a wide band gap semiconductor material. Furthermore, the growth ZnO nanorods which undergo electrical properties testing using dielectric analyzer and source meter show that the ZnO nanorods demonstrated rectifying behaviour.

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Periodical:

Advanced Materials Research (Volume 1109)

Pages:

104-107

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1109.104

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Online since:

June 2015

Authors:

Kai Loong Foo*, U. Hashim, Chun Hong Voon, M. Kashif

Keywords:

Hydrothermal, Interdigitated Electrode, Metal-Oxide-Semiconductor (MOS), ZnO Nanorods

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