Deposition Voltage Research of CdSe Quantum Dots Sensitized TiO2 Solar Cell

Liu Ying Zhao; Fu Fang Zhou; Peng Hu; Song Jie Han; Ping Wang

doi:10.4028/www.scientific.net/AMR.1118.182

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1118Deposition Voltage Research of CdSe Quantum Dots...

Deposition Voltage Research of CdSe Quantum Dots Sensitized TiO₂ Solar Cell

Abstract:

TiO₂ nanocrystalline semiconductor film was made on the titanium (Ti) substrate by hydrothermal method,and then prepared the CdSe quantum dot layer on the face of the TiO₂ nanocrystalline semiconductor film by electrochemical deposition method. We studied the affect of deposition voltage of the CdSe quantum dots’ growth, finding that when the deposition voltage was-1.3V,CdSe quantum dots grown best.However, In terms of CdSe/TiO₂ as the light-anode,using electricity chemistry workstation to test,We gain a solar cell with Short circuit current density of 1.45×10^-3A·cm^-2 and the open circuit voltage of 0.24 V.

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Periodical:

Advanced Materials Research (Volume 1118)

Pages:

182-185

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1118.182

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Online since:

July 2015

Authors:

Liu Ying Zhao, Fu Fang Zhou*, Peng Hu, Song Jie Han, Ping Wang

Keywords:

Electrochemical Deposition Method, Hydrothermal Method, New Energy, Quantum Dot, Solar Cell

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