Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

Shu Fan; Le Yu; Xiao Long He; Ping Han; Cai Chuan Wu; Jing Ping Dai; Xue Fei Li; Bin Liu; Li Qun Hu; Zi Li Xie; Xiang Qian Xiu; Chen Peng; Dun Jun Chen; Hong Zhao; Xue Mei Hua; Rong Zhang; You Dou Zheng

doi:10.4028/www.scientific.net/AMR.1120-1121.391

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1120-1121Surface Morphology of AlN Nucleation Layer Grown...

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

Abstract:

The AlN nucleation layer (NL) has been deposited on Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). The result indicates that the growth mode of the AlN NL is in the form of 2-dimensional plane and 3-dimensional island. The proportion of 3-dimensional region increases gradually and the 2-dimensional region reduces correspondingly with the increase of growth time. The decrease of the coverage ratio of AlN grains in the 2-dimensional growth region is due to the effect of etching. AlN film with the single crystal orientation has been deposited on the optimized AlN NL.

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Periodical:

Advanced Materials Research (Volumes 1120-1121)

Pages:

391-395

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1120-1121.391

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Online since:

July 2015

Authors:

Shu Fan*, Le Yu, Xiao Long He, Ping Han, Cai Chuan Wu, Jing Ping Dai, Xue Fei Li, Bin Liu, Li Qun Hu, Zi Li Xie, Xiang Qian Xiu, Chen Peng, Dun Jun Chen, Hong Zhao, Xue Mei Hua, Rong Zhang, You Dou Zheng

Keywords:

AFM, AlN Nl, SEM, Thickness

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