Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering

C.Y. Zou; Lai Sen Wang; Xiang Liu; Q.F. Zhang; Jun Bao Wang; Zhi Ling Huang; Xiong Zhi Wang; Qing Luo; Dong Liang Peng

doi:10.4028/www.scientific.net/AMR.1120-1121.424

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1120-1121Anomalous Hall Effect of the Co Thin Film...

Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering

Abstract:

In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρ^A_xy) have no scaling relation between ρ_xy and ρ_xx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρ^A_xy and ρ_xx is ρ^A_xy=A+bρ²_xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.

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Periodical:

Advanced Materials Research (Volumes 1120-1121)

Pages:

424-428

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1120-1121.424

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Online since:

July 2015

Authors:

C.Y. Zou, Lai Sen Wang*, Xiang Liu, Q.F. Zhang, Jun Bao Wang, Zhi Ling Huang, Xiong Zhi Wang, Qing Luo, Dong Liang Peng

Keywords:

Anomalous Hall Effect, Magnetron Sputtering, Thin Films, Weak Localization Effect

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