The Optical and Electrical Properties of Al and (Al, Cu) Doped ZnO Film

Dan Dan Wang; Qing Qing Fang; Jing Jing Yang

doi:10.4028/www.scientific.net/AMR.1120-1121.429

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1120-1121The Optical and Electrical Properties of Al and...

The Optical and Electrical Properties of Al and (Al, Cu) Doped ZnO Film

Abstract:

The optical and electric transport properties of the Al:ZnO(AZO) and (Cu, Al):ZnO (CAZO) films deposited by pulsed laser deposition (PLD) were investigated in this paper. The experiment found the optical band gap (OBG) of AZO films at room temperature increased from 3.378eV of ZnO to 3.446eV of ZnO:Al (2min) sample, but decreased as continue add Al to ZnO:Al (4min), which were attributes to the Burstein-Moss (B-M) effect. For CAZO films, there is obvious change about hall mobility, ν, and resistivity, ρ, after doped Cu. It can be found that the ν decreased from to and the ρ increased from to for AZO and CAZO, respectively, which is due to the scattering increasing between donor carriers and grain boundary as Cu²⁺ ions increase, meanwhile, it was also found the decrease of OBG, which are very help to further understand the electric transport properties and the OBG effect of AZO-based films as well as its devices potential application.

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Periodical:

Advanced Materials Research (Volumes 1120-1121)

Pages:

429-434

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1120-1121.429

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Online since:

July 2015

Authors:

Dan Dan Wang, Qing Qing Fang*, Jing Jing Yang

Keywords:

Al, Cu Doped, Electrical Properties, Optical, PLD, ZnO Films

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