Wide Range and Accurate Measurement of Wafer Thickness Gauge Using Optical Spectral Analyzer

Abstract:

Applicability of a generic optical spectrum analyzer that is familiar with laser experiments is investigated for on-site wafer thickness measurements in the thinning process, to resolve the issues regarding mismatch in the thickness range of previous thickness measurement system. The optimizations in terms of the spectral range, the spectral resolution and the dynamic range are successfully conducted by use of the optical spectrum analyzer. Owing to both high spectral resolution and wide dynamic range in near infrared spectral measurements, full range thickness measurements for the initial thickness 775μm and the terminal thickness 1μm and nanometer order accuracy are implemented.

• Periodical: Advanced Materials Research (Volume 1136)
• Pages: 581-585
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1136.581
• Online since: January 2016
• Authors: Teppei Onuki*, Yutaro Ebina, Hirotaka Ojima, Jun Shimizu, Libo Zhou
• Keywords: Optical Spectral Analyzer, Optical Thickness Gauge, Reflection Spectroscopy, Ultra Thin Wafer, Wafer Grinding, Wafer Thinning Process

References

[1] Teppei Onuki, Naoto Takagi, Jun Shimizu, Hirotaka Ojima and Libo Zhou, Spectroscopic measurements of silicon wafer thickness for backgrinding process, Advanced Material Research 325 (2011) 672-677.

DOI: 10.4028/www.scientific.net/amr.325.672

[2] Teppei Onuki, Ryusuke Ono, Takahiro Ojima, Jun Sshimizu and Libo Zhou, Thin silicon wafer thickness meter by means of near infrared spectroscopy, Journal of the Japan society for Abrasive Technology 55 (2011) 729-732 (in Japanese).

[3] Teppei Onuki, Ryusuke Ono, Akira Suzuki, Hirotaka Ojima, Jun Shimizu, and Libo Zhou, A thin silicon wafer thickness measurement system by optical reflectmetry scheme using Fourier transform near-infrared spectrometer, Advanced Material Research 797 (2013).

DOI: 10.4028/www.scientific.net/amr.797.549

[4] Teppei Onuki, Ryusuke Ono, Hirotaka Ojima, Jun Shimizu and Libo Zhou, Influence of surface integrity in silicon wafer thickness measurements by reflection spectroscopy,　Advanced Materials Research 1017 (2014)681-685.

DOI: 10.4028/www.scientific.net/amr.1017.681

[5] Teppei Onuki, Ryusuke Ono, Takahiro Ojima, Jun Sshimizu and Libo Zhou, Silicon wafer thickness meter by reflection spectroscopy using near infrared spectrometer, Journal of the Japan society for Abrasive Technology 58 (2014) 515-519 (in Japanese).

[6] Eugene Hecht, Optics, Addison Wesley Co., New York (2001) sect. 9. 6.

[7] https: /www. yokogawa. com/jp-ymi/tm/Bu/AQ6370D.