Growth and Electrical Characterizations of Sn0.3Se0.7 Crystals Grown by Direct Vapour Transport Technique

G.K. Solanki; Mohit Tannarana; Pratik Pataniya; K.D. Patel

doi:10.4028/www.scientific.net/AMR.1141.103

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1141Growth and Electrical Characterizations of...

Growth and Electrical Characterizations of Sn_0.3Se_0.7 Crystals Grown by Direct Vapour Transport Technique

Abstract:

Tin monoselenide (Sn_0.3Se_0.7) crystals have been grown by direct vapour transport technique. These crystals were found exhibit orthorhombic structure with space group D2h16 (Pcmn). The electrical measurements such as thermoelectric power and resistivity were carried out at high temperature on these as-grown crystals. The parameters like See back co-efficient, Fermi energy and scattering co-efficient were calculated from experimental data of TEP. The primary studies show the semiconducting behaviour of these crystals. Activation energy was also calculated by employing Arrhenius equation for grown samples. These layered materials, due to different kinds of interactions exhibits anisotropic crystalline structure and this lead to an anisotropy in electrical transport. Anisotropy seems to be decrease with temperature for all grown crystals. A detailed study about electrical transport and anisotropy in all such crystals will be presented at the time of presentation.

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Advanced Materials Research (Volume 1141)

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103-106

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https://doi.org/10.4028/www.scientific.net/AMR.1141.103

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Online since:

August 2016

Authors:

G.K. Solanki*, Mohit Tannarana, Pratik Pataniya, K.D. Patel

Keywords:

Anisotropy, Crystal Growth, Electrical Properties

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