Comparison of Hot Electron Mobility in h-Boron Nitride Nanosheets and Graphene under Manganese Doping

Abstract:

The electron mobility is calculated for h-BN nanosheets (h-BNNSs) and graphene with and without doping of manganese at high electric fields via acoustical deformation potential (ADP) scattering mechanism and piezoelectric scattering (Polar Acoustical Phonon (PAP) mechanism at low temperatures. Calculation includes the variation of electron Fermi energy and effective mass with high electric fields and with variation of Mn concentrations. Comparison of mobility in both the cases of with and without doping is carried out. It is observed that the net electron mobility due to both ADP and PAP mechanisms in graphene is much larger than that for h-BNNS for both the cases of with and without doping of manganese at low temperatures.

• Periodical: Advanced Materials Research (Volume 1141)
• Pages: 34-38
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1141.34
• Online since: August 2016
• Authors: Ankur Pandya*, Satyam Shinde, Prafulla K. Jha
• Keywords: Boron Nitride Nanosheet, Electron Mobility, Graphene, Piezoelectric Scattering

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