Copper Layer Elaborated by Using Different Electrochemical Methods on ITO/Glass Substrate

Abstract:

In this work, the reaction and nucleation mechanisms of the electrochemical deposition of copper on an indium-doped tin oxide (ITO) conductive glass substrate in a sulfate solution were characterized respectively by electrochemical methods Such as: cyclic voltammetry and chronoamperometry.The transients (current-time) obtained were analyzed by the model of Scharifker and Hills. The deposited copper layer can be described by a model involving instantaneous nucleation at active sites and diffusion controlled 3D growth. The values of the diffusion coefficient D for the Cu^{2 +} ions are also calculated. Electrochemical techniques were followed by morphological characterizations with atomic force microscopy (AFM).All experiments were carried out in an acid solution at pH 4.

• Periodical: Advanced Materials Research (Volume 1152)
• Pages: 65-72
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1152.65
• Online since: April 2019
• Authors: Brahim Khaniche*
• Keywords: Atomic Force Microscopy, Copper, ITO, Surface Morphology

References

[1] S.P. Murarka, S.W. Hymes, Crit. Rev. Sol. State Mater. Sci. 20 (1995) 87–124.

[2] Z.Yang, G.-G.Xiagl for SOFC interconnect applications, Surface and Coatings Technology,201(2006) 4476-4483.

[3] D. Landolt, J. Electrochem. Soc. 149 (2002) S9–S20.

[4] D. Grujicic, B. Pesic, Electrochim. Acta 50 (2005) 4426–4443.

[5] S. Varvara, L. Muresan, A. Nicoara, G. Maurin, I.C. Popescu, Mater. Chem. Phys.72 (2001) 332–336.

[6] K. Kondo, N. Yamakawa, Z. Tanaka, K. Hayashi, J. Electroanal. Chem. 559(2003)137–142.

[7] P.F.J. de Leon, E.V. Albano, R.C. Salvarezza, Phys. Rev. E 66 (2002) 042601– 042604.

[8] A.L. Portela, G.I. Lacconi, M. Lopez Teijelo, J. Electroanal. Chem. 495 (2001)169–172.

[9] L. Muresan, S. Varvara, G. Maurin, S. Dorneanu, Hydrometallurgy 54 (2000)161-169.

DOI: 10.1016/s0304-386x(99)00063-8

[10] D. Grujicic, B. Pesic, Electrochim. Acta 47 (2002) 2901–2912.

[11] L. Bonou, M. Eyraud, R. Denoyel, Y. Massiani, Electrochim. Acta 47 (2002)4139–4148.

DOI: 10.1016/s0013-4686(02)00356-0

[12] A.L. Portela, M. Lopez Teijelo, G.I. Lacconi, Electrochim. Acta 51 (2006) 3261– 3268.

[13] A.I. Danilov, E.B. Molodokina, Yu.M. Polukarov, Russ. J. Electrochem.38 (7) (2002) 732.

[14] D.Grujicic, B.Pesic ,Electrochimica Acta, 50 (2005)4426-4443.

[15] G. Oskam, P.M. Vereecken, P.C. Searson, J. Electrochem. Soc. 146(4) (1999) 1436.

[16] A. Radisic, J.G. Long, P.M. Hoffmann, P.C. Searson, J. Electrochem.Soc.148 (1) (2001) 41.

[17] Ch. Ji, G. Oskam, P.C. Searson, Surf. Sci. 492 (2001) 115–124.

[18] G. Oskam, J.G. Long, A. Natarajan, P.C. Searson,J. Phys. D: Appl. Phys. 31 (1998)1927–(1949).

[19] J.C. Ziegler, A. Reitzle, O. Bunk, J. Zegenhagen, D.M. Kolb, Electrochim. Acta 45(2000) 4599– 4605.

DOI: 10.1016/s0013-4686(00)00611-3

[20] R. Krumm, B. Guel, C. Schmitz, G. Staikov, Electrochim. Acta 45 (2000) 3255– 3262.

DOI: 10.1016/s0013-4686(00)00418-7

[21] A.A. Pasa, W. Schwarzacher, Phys. Status. Solidi. A 173 (1999) 73–84.

[22] J. Sasano, R. Murota, Y. Yamauchi, T. Sakka, Y.H. Ogata, J. Electroanal.Chem.559 (2003) 125–130.

[23] X.H. Xia, C.M.A. Ashruf, P.J. French, J.J. Kelly, Chem. Mater. 12 (2000) 1671–1678.

[24] R. Sonnenfeld, J. Schneier, P.K. Hansma, R.E. White, and J. O'M. Bockris, in: B.E. Conway (Ed.), Modern Aspects of Electrochemistry, vol. 21, Plenium, New York, (1990).

[25] S.W. Poon, Pan. J. S, Tok. E. S, Phys Chem 28 (2006)3326.

[26] B.Khaniche, H.Benamrani, A. Zouaoui, A.Zegadi, Mater.Sci.Semicond.Process 27 (2014)689–694.

[27] Southampton Electrochemistry Group, in: T.J. Kemp (Ed.), Instrumental Methods in Electrochemistry, Ellis Horwood Ltd., Chichester, UK, (1985).

DOI: 10.1002/zfch.19870270633

[28] R.Bertazolli, D. Pletcher, Electrochim. Acta 38(1993)671.

[29] A.N. Correira, S.A.S. Machado, L.A. Avaca,J Electroanal .Chem 488(2000)110.

[30] B. Scharifker, G. Hills, Electrochim. Acta 28 (1983) 879.