Electrical and Raman Spectroscopic Studies on Aurivillius Layered-Pervoskite Ceramics

Abstract:

Double rare-earth (La; Sm/Gd) substituted Aurivillius family of Bismuth Layered Structured Ferroelectrics (BLSF) namely Bi_2.6Sm_0.2La_0.2TiNbO₉ (BSLT; sample-A), Bi_2.6Gd_0.2La_0.2TiNbO₉ (BGLT; sample-B), single phase ceramics were prepared by solid state route. In addition, intergrowth (x BSLT - (1-x) BGLT, where x=0.49; sample-C) and solid solution (BSLT_­x - BGLT_y; where x + y=0.4; sample-D) materials were prepared. Dielectric, ferroelectric and Raman spectroscopic properties were studied on the said above materials. The X-ray diffraction analysis and Raman spectra revealed well-formation of stable structure. Though, the sample-C and sample-D have lower coercive field, compared to the sample-A and sample-B, but they exhibited sharp hysterisis loop. Therefore the instrinsic defects of sample-D inhabits more sensitivity towards the ferroelectric behaviour. The results were corroborated to the impedance and dielectrical data. The results were consistent with the SEM micrographs and complex impedance plots. An attempt is made to understand the effect of rare-earth ions on A-site of layered-pervoskite structure, defined as: (Bi₂O₂)²⁺(A_n-1B_nO_3n+1)^2-.The term n represents number of pervoskite blocks interleaved with the bismuth oxide layers.

• Periodical: Advanced Materials Research (Volume 1154)
• Pages: 80-90
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1154.80
• Online since: June 2019
• Authors: Mohammed Abdul Basheer, Vagmare Gangadhar, Guduru Prasad, Gobburu Subramanya Kumar, Nandi Venkata Prasad*
• Keywords: Bismuth Layered Structure Ferroelectric (BLSF), Dielectric, Hysteresis Loop, Intergrowth Ferroelectric, Raman Spectroscopy

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