ZnO Porous Plate Films Application in Quantum Dot Sensitized Solar Cells

Article Preview

Abstract:

As a kind of semiconducting and promising material, ZnO has been extensively used in dye-sensitized solar cells (DSSCs). Quantum dot sensitized solar cells (QDSSCs) has more potential to increase the efficiency of solar cells compared with DSSCs. Here we developed a simple and effective way to fabricate ZnO porous plate films by electrochemical deposition and anneal in air on ITO-coated glass substrates. CdS quantum dots were attached to the surface of the porous plate films by chemical bath deposition technique. Quantum dot-sensitized ZnO porous plate films solar cells exhibited short-circuit current ranging from 0.22-0.57mA/cm2 and open-circuit voltage of 0.42 -0.57V when illuminated with 100 mW/cm2 simulated AM 1.5 G irradiation.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 123-125)

Pages:

284-287

Citation:

Online since:

August 2010

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2010 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] B. O'Regan and M. Grätzel: Nature. Vol. 353 (1991), p.737.

Google Scholar

[2] M. Grätzel: Nature, Vol. 414 (2001), p.338.

Google Scholar

[3] Y.L. Lee and C.H. Chang: J. Power. Sources Vol. 185 (2008), p.584.

Google Scholar

[4] C.H. Chang and YL Lee: Appl. Phys. Lett Vol. 91 (2007), 053503.

Google Scholar

[5] S.Q. Fan, D Kim, J.J. Kim, D.W. Jung, S.O. Kang and J. Ko: Electrochem. Commun. Vol. 11 (2009), p.1337.

Google Scholar

[6] P. Hoyer and R. Könenkamp: Appl. Phys. Lett Vol. 66 (1995), p.349.

Google Scholar

[7] R. D. Schaller and V. I. Klimov: Phys. Rev. Lett Vol. 92 (2004), p.186601.

Google Scholar

[8] I. Robel, V. Subramanian, M. Kuno and P.V. Kamat: J. Am. Chem. Soc Vol. 128 (2006), p.2385.

Google Scholar

[9] A.J. Nozik: Physica E. Vol. 14 (2002), p.115.

Google Scholar

[10] A. Umar: Nanoscale. Res. Lett Vol. 4 (2009) p.1004.

Google Scholar

[11] Z. Liu, C. Liu, J. Ya and L. E: Solid. State. Sciences Vol. 12 (2010) p.111.

Google Scholar

[12] E.M. Kaidashev, M. Lorenz, H. Wenckstern, A. Rahm, H.C. Semmelhack, K.H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth and M. Grundmann: Appl. Phys. Lett Vol. 82 (2003) p.3901.

DOI: 10.1063/1.1578694

Google Scholar

[13] J. Chen, C. Li, J.L. Song, X.W. Sun, W. Lei and W.Q. Deng: Appl. Surf. Sci Vol. 255 (2009) p.7508.

Google Scholar

[14] W. Lee, S.K. Min, V. Dhas, S.B. Ogale and S.H. Han: Electrochem. Commun Vol. 11 (2009) p.103.

Google Scholar

[15] K.S. Leschkies, R. Divakar, J. Basu, E. Enache-Pommer, J.E. Boercker, C.B. Carter, U.R. Kortshagen, D.J. Norris and E.S. Aydil: Nano. Lett Vol. 7 (2007) p.1793.

DOI: 10.1021/nl070430o

Google Scholar

[16] Q. Zhong, X.T. Huang, J. Duan, J.P. Liu, F.L. Sun and X. He: Mater. Lett Vol. 62 (2008) p.188.

Google Scholar