A Dishing Model for Chemical Mechanical Polishing of Plug Structures

Shih Hsiang Chang

doi:10.4028/www.scientific.net/AMR.126-128.276

Paper Titles

A Study of Ultrasonically Assisted Fly Cutting for High Precision Machining Hard Brittle Materials
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The Investigation on Small Hole Drilling-Grinding in Glass and Ceramic
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Machining Schemes for Dicing Soda Lime Glass
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Effect of Shear and Thermal Characteristics on Chemical Mechanical Polishing
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A Dishing Model for Chemical Mechanical Polishing of Plug Structures
p.276

Two Dimensional Ultrasonic Vibration Assisted Chemo-Mechanical Grinding of Si Wafer
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Machining Force and Modes for Si Wafer Machining with Rotational Tool
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Wafer Polishing Process with Signal Analysis and Monitoring for Optimum Condition of Machining
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Effects of Wafer Carrier Design on Contact Stress Uniformity in CMP
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 126-128A Dishing Model for Chemical Mechanical Polishing...

A Dishing Model for Chemical Mechanical Polishing of Plug Structures

Abstract:

It is well known that dishing occurring in chemical mechanical polishing of plug structures leads to considerable wafer surface non-planarity and reduces the current/charge conduction. Thus, a closed-form solution for quantitative prediction of dishing is needed. A contact-mechanics-based approach to describe the steady-state dishing occurring in chemical mechanical polishing of plug structures is presented. The model is then applied to investigate the effect of pattern geometry on dishing in details. It was shown that plug dishing strongly depends on plug size, but minimally on pattern density. In addition, the maximum value of dishing occurs at a critical pattern density for fixed pitch.

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Advanced Materials Research (Volumes 126-128)

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276-281

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https://doi.org/10.4028/www.scientific.net/AMR.126-128.276

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Online since:

August 2010

Authors:

Shih Hsiang Chang

Keywords:

Chemical Mechanical Polishing (CMP), Contact Mechanics, Plug Dishing

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