A New 4H-SiC MESFET Utilizing N- Shielding and Field Plate Techniques Simultaneously

Abstract:

Article Preview

Some new techniques include n- shielding, buried channel and field plate are firstly adopted together for design and fabrication of 4H-SiC microwave MESFETs. The testing results show that a relatively broad and uniform transconductance versus gate voltage was obtained using a 0.1m n- shielding. 0.3mm gate periphery device shows good DC and RF performance such as 5.27W/mm power density, 6.7dB power gain and 43% power added efficiency at 2.3GHz under pulse operation. Compared to conventional SiC MESFETs, a gate lag ratio as high as 0.84 can be achieved for the developed devices even under a nearly actual operating condition.

Info:

Periodical:

Advanced Materials Research (Volumes 148-149)

Edited by:

Xianghua Liu, Zhengyi Jiang and Jingtao Han

Pages:

1182-1187

DOI:

10.4028/www.scientific.net/AMR.148-149.1182

Citation:

H. J. Jia et al., "A New 4H-SiC MESFET Utilizing N- Shielding and Field Plate Techniques Simultaneously", Advanced Materials Research, Vols. 148-149, pp. 1182-1187, 2011

Online since:

October 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.