A New 4H-SiC MESFET Utilizing N- Shielding and Field Plate Techniques Simultaneously

Hu Jun Jia; Yin Tang Yang; Chang Chun Chai

doi:10.4028/www.scientific.net/AMR.148-149.1182

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 148-149A New 4H-SiC MESFET Utilizing N- Shielding and...

A New 4H-SiC MESFET Utilizing N^- Shielding and Field Plate Techniques Simultaneously

Abstract:

Some new techniques include n- shielding, buried channel and field plate are firstly adopted together for design and fabrication of 4H-SiC microwave MESFETs. The testing results show that a relatively broad and uniform transconductance versus gate voltage was obtained using a 0.1m n- shielding. 0.3mm gate periphery device shows good DC and RF performance such as 5.27W/mm power density, 6.7dB power gain and 43% power added efficiency at 2.3GHz under pulse operation. Compared to conventional SiC MESFETs, a gate lag ratio as high as 0.84 can be achieved for the developed devices even under a nearly actual operating condition.

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Periodical:

Advanced Materials Research (Volumes 148-149)

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1182-1187

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.148-149.1182

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Online since:

October 2010

Authors:

Hu Jun Jia, Yin Tang Yang, Chang Chun Chai

Keywords:

Field Plate, MESFET, Microwave Power, Shielding, Silicon Carbide (SiC)

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References

[1] A.V. Los: J Appl. Phys., Vol. 100(2006), p.014507.

Google Scholar

[2] H. -Y. Cha C.I. Thomas,G. Koley, et al: IEEE Trans. Electron Devices, Vol. 51(2003), p.1569.

Google Scholar

[3] Andersson K, Sudow M, Nilsson P, et al: IEEE Electron Device Lett., Vol. 27(2006), p.573.

Google Scholar

[4] N. Sghaier J.M. Bluet,A. Souifi, et al: IEEE Trans. Electron Devices, Vol. 50(2003), p.297.

Google Scholar

[5] K.P. Hilton M.J. Uren D.G. Hayes, et al: Materials Science Forum, Vol. 389-393(2002), p.1387.

Google Scholar

[6] M. Gassoumi,I. Dermoul,F. Chekir, et al: Proc. 24th int. conf. on microelect. (MIEL 2004), Vol. 2(2004), p.16.

Google Scholar

[7] K.P. Hilton M.J. Uren D.G. Hayes, et al: Materials Science Forum, Vol. 338-342(2000), p.1251.

Google Scholar

[8] P. Nilsson, F. Allerstam, M Stidow, et al: IEEE Trans. on Electron Devices, Vol. 55(2008), p.1875.

Google Scholar

[9] H. -Y. Cha C.I. Thoms Y.C. Choi, et al: Int.J. High Speed Elec. Syst., Vol. 14(2004), p.884.

Google Scholar

[10] H. -Y. Cha C.I. Thoms Y.C. Choi, et al: IEEE Electron Device Lett., Vol. 24(2003), p.571.

Google Scholar

[11] H.G. Henry,G. Augustine G.C. DeSalvo, et al: IEEE Trans. Electron Devices, Vol. 51(2004), p.839.

Google Scholar