Stability of AZO Thin Films under the Environment of Hydrogen Plasma

Qing Nan Zhao; Wen Hui Yuan; Hong Yu Liang; Wei Yuan Wang; Pu Lei Yang; Yu Hong Dong

doi:10.4028/www.scientific.net/AMR.194-196.2334

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 194-196Stability of AZO Thin Films under the Environment...

Stability of AZO Thin Films under the Environment of Hydrogen Plasma

Abstract:

The textured thin films of Aluminum-doped zinc oxide (AZO), prepared on glass substrates by magnetron sputtering, were treated under the environment of hydrogen plasma in plasma enhanced chemical vapor deposition (PECVD) chamber for different time. The structure and properties of the thin films before and after the treatment were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis –NIR spectrometer. The results obtained showed that, after the treatment, the crystal structure of the films was not obviously changed, the roughness of the films was reduced, the carrier concentration and Hall mobility of the films increased to a certain saturated level with the treatment time, and the conductivity of the films increased. The transmittance and optical band gap of the AZO films was not affected by plasma treatment.

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Advanced Materials Research (Volumes 194-196)

Pages:

2334-2339

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.194-196.2334

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Online since:

February 2011

Authors:

Qing Nan Zhao, Wen Hui Yuan, Hong Yu Liang, Wei Yuan Wang, Pu Lei Yang, Yu Hong Dong

Keywords:

AZO Thin Film, Electrical Properties, Hydrogen Plasma, Optical Property, PECVD, Treatment Time

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