Preparation of C60 Thin Film and Investigation of its Optical Properties

Xue Liang Yang; Jin Xiang Deng; Ting Li; Yang Qin; Le Kong

doi:10.4028/www.scientific.net/AMR.194-196.2317

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 194-196Preparation of C60 Thin Film and Investigation of...

Preparation of C₆₀ Thin Film and Investigation of its Optical Properties

Abstract:

C₆₀ thin films were deposited on Si substrates at different evaporation temperatures using the thermal evaporation method. In this paper, an extensive study of morphology and crystallinity of the films was presented by atomic force microscopy (AFM), low angle X-ray diffraction (LA-XRD) and UV-vis spectrophotometer. It is found that a good crystalline quality along a (333) preferred orientation was observed at the 450°C evaporation temperature and an ordered sequence of fcc structure was evaluated. The 2.24eV optical energy bandgag of C₆₀ thin film corresponding to h_u→ t_1u transition between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels was also extracted.

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Advanced Materials Research (Volumes 194-196)

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2317-2321

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https://doi.org/10.4028/www.scientific.net/AMR.194-196.2317

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Online since:

February 2011

Authors:

Xue Liang Yang, Jin Xiang Deng, Ting Li, Yang Qin, Le Kong

Keywords:

C₆₀ Thin Film, Optical Energy Band Gap, Preferred Orientation, Thermal Evaporation

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