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Dependence of Film Thickness on Properties of Al Doped ZnO Thin Films

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Abstract:

In this study high quality of Al doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature in order to study the thickness effect upon their structure, electrical and optical properties. XRD results show that the films are polycrystalline and with strongly preferred (002) orientation perpendicular to substrate surface whatever the thickness is. The crystallite size was calculated by Williamson-Hall method, while it increases as the film thickness increased. The lattice stress is mainly caused by the growth process. Hall measurements revealed electrical parameter very dependent upon thickness when the thickness of ZAO film is lower than 700 nm. The resistivity decreased and the carrier concentration and Hall mobility increases as the film thickness increased. When film thickness becomes larger, only a little change in the above properties was observed. All the films have high transmittance above 90% in visible range. Red shift of the absorption edge was observed as thickness increased. The optical energy bandgap decreased from 3.41eV to 3.30 eV with the increase of film thickness.

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Periodical:

Advanced Materials Research (Volumes 194-196)

Pages:

2305-2311

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.194-196.2305

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Online since:

February 2011

Authors:

Ying Ge Yang, Dong Mei Zeng, Hai Zhou, Wen Ran Feng, Shan Lu, Wei Bin Feng

Keywords:

RF Magnetron Sputtering, Thickness Effect, Zinc Oxide (ZnO)

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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