Characteristics of Intergrown Superlattice Bismuth-Layered-Structure Ferroelectrics Thin Films Prepared by Sol-Gel Method

Hua Wang; Jian Li; Ji Wen Xu; Ling Yang; Ming Fang Ren

doi:10.4028/www.scientific.net/AMR.197-198.503

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 197-198Characteristics of Intergrown Superlattice...

Characteristics of Intergrown Superlattice Bismuth-Layered-Structure Ferroelectrics Thin Films Prepared by Sol-Gel Method

Abstract:

Intergrown superlattice Bi₃TiNbO₉–Bi₄Ti₃O₁₂ (BTN–BIT) and SrBi₄Ti₄O₁₅–Bi₄Ti₃O₁₂ (SBT–BIT) ferroelectric thin films have been prepared on p-Si substrates by sol-gel processing. The precursor thin films are crystallized in the desired intergrown superlattice BTN–BIT and SBT–BIT structures annealed at 700°C. Synthesized BTN–BIT and SBT-BIT thin films exhibited good ferroelectric properties and excellence fatigue endurance. BTN–BIT thin films showed a P_r value approximately 19.1µC/cm² and a memory window of 0.7V. Although a little smaller P_r value and memory window were observed for the SBT–BIT thin films, the squareness of a P–E hysteresis loop was superior to that of BTN–BIT thin films. Also, the SBT–BIT thin films had more excellence fatigue endurance compared with BTN–BIT thin films.

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Periodical:

Advanced Materials Research (Volumes 197-198)

Pages:

503-506

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.197-198.503

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Online since:

February 2011

Authors:

Hua Wang, Jian Li, Ji Wen Xu, Ling Yang, Ming Fang Ren

Keywords:

Bi₃TiNbO₉-Bi₄Ti₃O₁₂, Intergrowth Superlattice, Property Analysis, Sol-Gel (SG), SrBi₄Ti₄O₁₅-Bi₄Ti₃O₁₂

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