Characteristics of Intergrown Superlattice Bismuth-Layered-Structure Ferroelectrics Thin Films Prepared by Sol-Gel Method

Abstract:

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Intergrown superlattice Bi3TiNbO9–Bi4Ti3O12 (BTN–BIT) and SrBi4Ti4O15–Bi4Ti3O12 (SBT–BIT) ferroelectric thin films have been prepared on p-Si substrates by sol-gel processing. The precursor thin films are crystallized in the desired intergrown superlattice BTN–BIT and SBT–BIT structures annealed at 700°C. Synthesized BTN–BIT and SBT-BIT thin films exhibited good ferroelectric properties and excellence fatigue endurance. BTN–BIT thin films showed a Pr value approximately 19.1µC/cm2 and a memory window of 0.7V. Although a little smaller Pr value and memory window were observed for the SBT–BIT thin films, the squareness of a P–E hysteresis loop was superior to that of BTN–BIT thin films. Also, the SBT–BIT thin films had more excellence fatigue endurance compared with BTN–BIT thin films.

Info:

Periodical:

Advanced Materials Research (Volumes 197-198)

Edited by:

Huaiying Zhou, Tianlong Gu, Daoguo Yang, Zhengyi Jiang, Jianmin Zeng

Pages:

503-506

DOI:

10.4028/www.scientific.net/AMR.197-198.503

Citation:

H. Wang et al., "Characteristics of Intergrown Superlattice Bismuth-Layered-Structure Ferroelectrics Thin Films Prepared by Sol-Gel Method", Advanced Materials Research, Vols. 197-198, pp. 503-506, 2011

Online since:

February 2011

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$35.00

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