Influence of Carbon Source Concentration on Characterization of Boron-Doped Diamond Electrodes

Abstract:

A set of boron-doped diamond (BDD) electrodes were deposited on silicon substrates by direct current plasma chemical vapor deposition (DC-PCVD) system using different carbon source concentrations. The influence of carbon source concentration on characterization of BDD electrodes was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and phenol degradation. It was found that BDD films with different carbon source concentrations were polycrystalline films with (111) dominant orientation. The films grew well when carbon source concentration was less than 2.5%, while graphite phase began to form when carbon source concentration was increased to 3%. Boron atoms were located at the substitutional site or interstitial sites in the crystalline lattice of diamond films, and didn’t damage the structure of diamond crystal. Within 4 h, 100 mg/L phenol solution in 80 ml could be oxidized by all the electrodes with removal efficiency higher than 90%.

• Periodical: Advanced Materials Research (Volumes 204-210)
• Pages: 1691-1696
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.204-210.1691
• Online since: February 2011
• Authors: Yu Qiang Chen, Jiang Wei Lv, Hong Wei Jiang, Hong Yan Peng, Yu Jie Feng, Long Cheng Yin, Dan Wang, Hai Liang Wang
• Keywords: Boron-Doped Diamond (BDD), Chemical Vapor Deposition (CVD), Phenol

References

[1] S. Matsumoto, Y. Sato, M. Kamo and N. Setaka, Jpn. J. Appl. Phys. 21, 184 (1982).

[2] M. Panizza and G. Cerisola, Electrochim. Acta 51, 191 (2005).

[3] X.P. Zhu, M.P. Tong, S.Y. Shi, H.Z. Zhao and J.R. Ni, Environ. Sci. Technol. 42, 4914 (2008).

[4] R. Tenne, K. Patel, K. Hashimoto and A. Fujishima, J. Electroanal. Chem. 347, 409 (1993).

[5] J.Z. Xu and G.M. Swain, Anal. Chem. 70, 1502 (1998).

[6] J. Iniesta, P.A. Michaud, M. Panizza, G. Cerisola, A. Aldaz and C. Comninellis, Electrochim. Acta. 46, 3573 (2001).

[7] E. Brillas, B. Boye, I. Sires, J.A. Garrido, R.M. Rodriguez, C. Arias, P.L. Cabot and C. Comninellis, Electrochim. Acta. 49, 4487(2004).

[8] Ozcan, Y. Sahin, A.S. Koparal and M.A. Oturan, Water Res. 42, 2889(2008).

[9] S. Ferro, M. Dal Colle and A. De Battisti, Carbon 43, 1191 (2005).

[10] P. Hartmann, S. Bohr, R. Haubner, B. Lux, P. Wurzinger, M. Griesser, A. Bergmaier, G. Dollinger, H. Sternschulte and R. Sauer, Int. J. Refract. Met. Hard Mat. 16, 223 (1998).

DOI: 10.1016/s0263-4368(98)00022-5

[11] J.C. Zhang, J.W. Zimmer, R.T. Howe and R. Maboudian, Diamond. Relat. Mater. 17, 23 (2008).

[12] K. Suzuki, A. Sawabe, H. Yasuda and T. Inuzuka, Appl. Phys. Lett. 50, 728 (1987).

[13] K. Suzuki, A. Sawabe and T. Inuzuka, Appl. Phys. Lett. 53, 1818 (1988).

[14] J.K. Lee, Y.J. Baik and K.Y. Eun, Mater. Sci. Eng. A 209, 399 (1996).

[15] Y.Z. Bai, S.S. Jin, X.Y. Lv, Z.G. Jiang, J.Y. Wang and H.H. Wu, Diamond. Relat. Mater. 14, 1494 (2005).

[16] J.W. Lv, Y.J. Feng, H.Y. Peng and Y.Q. Chen. Journal of The Chinese Ceramic Society. Vol. 38, No. 5(2010).