Evaluation of the Dielectric by Measuring Leakage Currents on Self-Built Capacitor-Like Devices

Abstract:

In metal-insulator-silicon (MIS) structure, 100 Å Ta₂O₅ films are deposited on 1000 Å doped poly silicon as a bottom electrode layer, followed by 500 Å TiN metal as the top electrode [1]. The measured leakage currents as shown are either temperature dependent as the top electrode is negatively biased or temperature independent as the top electrode is positively biased. Therefore, the mechanism of current conduction is believed to be Fowler-Nordheim tunneling as the top electrode of the capacitor is positively biased. As for the top electrode is negatively biased, the temperature-dependent leakage currents satisfying reasonable arguments about dielectric constant suggest that the most probable conduction mechanism should be attributed to Poole-Frenkel emission.

• Periodical: Advanced Materials Research (Volumes 204-210)
• Pages: 558-562
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.204-210.558
• Online since: February 2011
• Authors: Hsin Chia Yang, Mu Chun Wang
• Keywords: Equivalent Dielectric (Oxide) Thickness, Leakage Current, Mechanism of Current Conduction

References

[1] Hsin-Chia Yang and Yi-Chang Cheng, Japanese Journal of Applied Physics, vol. 44, No. 4A. 2005. pp.1711-1716.

[2] Thomas Chang, SEMICON Taiwan, 1999, p.245–250.

[3] Steve Yang, (Hsin-Chia Yang) , SEMICON Taiwan, 1999, p.395–398.

[4] Hsin-Chia Yang, Determination of Capacitance of DRAM Capacitor as Encountering Roll-Off problems, IEEE international conference, ICEMI 2009, 4-585.

DOI: 10.1109/icemi.2009.5274652