EDS, XRD and Raman Scattering Study of Dy Ion Implanted CdTe Polycrystalline Thin Films

Juan Hou; Hai Bin Cao; Xu Chu Huang; Chun Yan Song

doi:10.4028/www.scientific.net/AMR.213.157

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 213EDS, XRD and Raman Scattering Study of Dy Ion...

EDS, XRD and Raman Scattering Study of Dy Ion Implanted CdTe Polycrystalline Thin Films

Abstract:

Dysprosium (Dy) ion implanted CdTe polycrystalline thin film (PTF) deposited on the ceramic substrate by the close spaced sublimation （CSS) method. Both the energy dispersive X-ray spectrometer（EDS）and Raman scattering analysis show that the as-deposited and Dy ion implanted CdTe PTF are non-stoichiometric with excess telluride. Furthermore, X-ray diffraction study reveals that the CdTe PTF forms a zinc-blended structure. In the Raman scattering analysis, the position of the peak on implantation does not change apparently whereas the intensity of the peak decreases owing to the lattice damage and increases as a result of thermal annealing. The data support that Raman activity is enhanced after Dy ion implantation.

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Periodical:

Advanced Materials Research (Volume 213)

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157-160

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https://doi.org/10.4028/www.scientific.net/AMR.213.157

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February 2011

Authors:

Juan Hou, Hai Bin Cao, Xu Chu Huang, Chun Yan Song

Keywords:

CdTe, Ion Implantation, Raman Scattering, X-Ray Diffraction (XRD)

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