Laser-Induced Doping of CdTe Crystals in Different Environments

Abstract:

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Different procedures of laser-induced doping of the surface region of semi-insulating CdTe semiconductor are discussed. CdTe crystals pre-coated with an In dopant film were subjected to irradiation with nanosecond laser pulses in different environments (vacuum, gas or water). The dopant self-compensation phenomenon was overcome under laser action and In impurity with high concentration was introduced in a thin surface layer of CdTe. In the case of a thick (300-400 nm) In dopant film, laser-induced shock wave action has been considered as the mechanism of solid-phase doping. Formed In/CdTe/Au diode structures showed high rectification depending on the fabrication procedure. Diodes with low leakage current were sensitive to high energy radiation.

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Periodical:

Edited by:

Arturs Medvids

Pages:

32-35

DOI:

10.4028/www.scientific.net/AMR.222.32

Citation:

V. A. Gnatyuk et al., "Laser-Induced Doping of CdTe Crystals in Different Environments", Advanced Materials Research, Vol. 222, pp. 32-35, 2011

Online since:

April 2011

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$35.00

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