Laser-Induced Doping of CdTe Crystals in Different Environments

Volodymyr A. Gnatyuk; Sergiy N. Levytskyi; Oleksandr I. Vlasenko; Toru Aoki

doi:10.4028/www.scientific.net/AMR.222.32

Paper Titles

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Application of Titanium Dioxide Nanorods in DSC Using Hydrothermal Method
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Laser-Induced Modification of the Surface State and Optical Properties of CdTe Crystals
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Laser-Induced Doping of CdTe Crystals in Different Environments
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 222Laser-Induced Doping of CdTe Crystals in Different...

Laser-Induced Doping of CdTe Crystals in Different Environments

Abstract:

Different procedures of laser-induced doping of the surface region of semi-insulating CdTe semiconductor are discussed. CdTe crystals pre-coated with an In dopant film were subjected to irradiation with nanosecond laser pulses in different environments (vacuum, gas or water). The dopant self-compensation phenomenon was overcome under laser action and In impurity with high concentration was introduced in a thin surface layer of CdTe. In the case of a thick (300-400 nm) In dopant film, laser-induced shock wave action has been considered as the mechanism of solid-phase doping. Formed In/CdTe/Au diode structures showed high rectification depending on the fabrication procedure. Diodes with low leakage current were sensitive to high energy radiation.

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Periodical:

Advanced Materials Research (Volume 222)

Pages:

32-35

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.222.32

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Online since:

April 2011

Authors:

Volodymyr A. Gnatyuk, Sergiy N. Levytskyi, Oleksandr I. Vlasenko, Toru Aoki

Keywords:

I-V Characteristic, Laser-Induced Doping, P-N Junction, X-Ray Detector, γ-Ray Detector

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