Defect and Structure Engineering – Submicron Technology and Inverse Nanotechnology for Photo- and Ionizing Radiation Detectors

Abstract:

A review is given of what kind technological aspects were used for realizing the defect engineering in semiconductor layers or crystals. The possibilities to change the free carrier capture are presented. The effect of Fermi level pinning at the surface levels allow to avoid the influence of barriers on the photoconductivity as well as to increase a role of recombination in the inter-crystalline region. The isovalent doping or the creation of the clusters allows transforming the defect distribution in the crystal bulk. The detector structure using the high electric field can introduce the recombination in at the contacts therefore allow diminishing a role of carrier capture in the bulk of structure. The cluster generation allows to increase the capture rate in the definite volume by a proton irradiation. The experience of different technologies for Si, GaAs, PbS, CdSe are presented.

• Periodical: Advanced Materials Research (Volume 222)
• Pages: 14-17
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.222.14
• Online since: April 2011
• Authors: Juozas Vidmantis Vaitkus
• Keywords: CdSe, Defect Engineering, GaAs, Ionizing Radiation Detectors, Photodetector (PD), Polycrystalline Semiconductors, Si

References

[1] Gettering and Defect Engineering in Semiconductor Technology XIII, Edited by: M. Kittler and H. Richter. Solid State Phenomena Vols. 156 – 158 (2009).

[2] F. Hartmann et al (RD50 Collaboration): Nuclear Instruments and Methods in Physics Research A Vol. 617 (2010), p.543.

[3] S. Karpinskas, A. Smilga, J. Vaitkus and J. Viščakas, in: Proc. Int. Conf. Physics and Chemistry of Semicond. Heterojunct. and layered structures, volume II, pp.355-362, Akademi Kiado, Budapest (1971).

[4] A. Rose. Concepts in photoconductivity and allied problems. (Interscience Publishers, New York 1963).

[5] J. Viščakas and J. Vaitkus. Lithuanian physics collection Vol. 5 (1965), p.123.

[6] J. Viščakas, J. Vaitkus, A. Matulionis and A. Smilga, in: Digests of All-Union Workshop on II-VI semiconductors and their application, pp.104-105 Kiev, (1966).

[7] J. Vaitkus, R. Jasinskaite, V. Kazlauskienė, J. Miškinis and A. Zindulis: Thin Solid Films, Vol 387/1-2 (2001), p.212.

[8] J. Vaitkus, R. Tomašiūnas, J. Kutra, M. Petrauskas and A. Zindulis: J. Cryst. Growth, Vol. 101 (1990), p.826.

[9] J. Vaitkus, V. Kazlauskiene, J. Miskinis and J. Sinius: Materials Res. Bull.: Vol. 33 (1998), p.711.

[10] J. Vaitkus, R. Baubinas, V. Kazlauskienė, J. Miškinis, A. Mažeikis, E. Žąsinas and A. Žindulis: Microelectr.J. Vol. 30(4-5) (1999), p.335.

[11] W.C. Omara, R.B. Herring and L.P. Hunt. Handbook of Semiconductor Silicon technology. Noyes Publ. (1990).

[12] V. Amstibovskij, J. Vaitkus, E. Gaubas, A. Kaniava and A. Rudaitis: Lithuanian physics collection Vol. 28(5) (1988), p.644.

[13] V. Amstibovskij, private communication.

[14] J.A. Grigorjev, V.I. Biberin, V.B. Osvenskij, S.P. Grisina, J.J. Vaitkus, J.J. Storasta, A.V. Markov and O.L. Egorova. USSR A.C. No. 242614, priority from 10. 10. 85 (1986).

[15] V. Kažukauskas, J. Storasta, and J. -V. Vaitkus: J. Appl. Phys. Vol. 89 (2001), p.557.

[16] M. Huhtinen: Nuclear Instruments and Methods in Physics Research A Vol. 491 (2002), p.194–215.

[17] E. Gaubas, T. Čeponis, A. Uleckas and J. Vaitkus: Nuclear Instruments and Methods in Physics Research A: Vol. 612(3) (2010), p.563.

DOI: 10.1016/j.nima.2009.08.024

[18] J.L. Hastings, S.K. Estreicher and P.A. Fedders: Phys. Rev. B Vol. 56(16) (1997), p.10215.

[19] G. Davies, S. Hayama, L. Murin, R. Krause-Rehberg, V. Bondarenko, A. Sengupta, C. DaVia, and A. Karpenko: Radiation damage in silicon exposed to high-energy protons. Physical Review B 73, 165-202 (2006).

DOI: 10.1103/physrevb.73.165202

[20] M. Moll et al. (RD50 Collaboration): Nuclear Instruments and Methods in Physics Research A Vol. 546 (2005), p.99.

[21] T. Čeponis, A. Balčytis, A. Dzimidavičius, E. Gaubas, J. Kusakovskij, and K. Žilinskas: Lith. J. Phys. Vol. 50(2) (2010), p.215.

DOI: 10.3952/lithjphys.50205