Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity

Abstract:

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A unique single-photon detector is reported, which utilizes scaled-down silicon-on- insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with single-electron sensitivity, and features low-voltage operation without carrier multiplication and low dark counts. Primary single-photon detection characteristics are presented, and then several issues related to operation speed and quantum efficiency are to be addressed.

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Periodical:

Edited by:

Arturs Medvids

Pages:

3-7

DOI:

10.4028/www.scientific.net/AMR.222.3

Citation:

H. Inokawa et al., "Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity", Advanced Materials Research, Vol. 222, pp. 3-7, 2011

Online since:

April 2011

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$35.00

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