Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity

Hiroshi Inokawa; Wei Du; Mitsuru Kawai; Hiroaki Satoh; Atsushi Ono; Vipul Singh

doi:10.4028/www.scientific.net/AMR.222.3

Paper Titles

Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity
p.3

CZTS Monograin Powders and Thin Films
p.8

Defect and Structure Engineering – Submicron Technology and Inverse Nanotechnology for Photo- and Ionizing Radiation Detectors
p.14

Self-Organization Processes of Nanostructure Formation by Laser Radiation in Metal
p.18

Application of Titanium Dioxide Nanorods in DSC Using Hydrothermal Method
p.24

Laser-Induced Modification of the Surface State and Optical Properties of CdTe Crystals
p.28

Laser-Induced Doping of CdTe Crystals in Different Environments
p.32

The Electrodynamic Human Motion Energy Converter with Planar Structure
p.36

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 222Single-Photon Detector Based on MOSFET...

Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity

Abstract:

A unique single-photon detector is reported, which utilizes scaled-down silicon-on- insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with single-electron sensitivity, and features low-voltage operation without carrier multiplication and low dark counts. Primary single-photon detection characteristics are presented, and then several issues related to operation speed and quantum efficiency are to be addressed.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 222)

Pages:

3-7

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.222.3

Citation:

Cite this paper

Online since:

April 2011

Authors:

Hiroshi Inokawa, Wei Du, Mitsuru Kawai, Hiroaki Satoh, Atsushi Ono, Vipul Singh

Keywords:

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Radio-Frequency (RF) Reflectance, Silicon-on-Insulator (SOI), Single Photon Detection, Surface Plasmon Antenna

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A.N. Cleland, D. Esteve, C. Urbina and M.H. Devoret: Appl. Phys. Lett. Vol. 61 (1992), p.2820.

Google Scholar

[2] O. Astafiev, S. Komiyama, T. Kutsuwa, V. Antonov, Y. Kawaguchi and K. Hirakawa: Appl. Phys. Lett. Vol. 80 (2002), p.4250.

DOI: 10.1063/1.1482787

Google Scholar

[3] R. Nuryadi, Y. Ishikawa and M. Tabe: Phys. Rev. B Vol. 73 (2006), p.045310.

Google Scholar

[4] A. Fujiwara, K. Yamazaki and Y. Takahashi: Appl. Phys. Lett. Vol . 80 (2002), p.4567.

Google Scholar

[5] K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa and Y. Takahashi: Appl. Phys. Lett. Vol. 90 (2007), p.223108.

DOI: 10.1063/1.2744488

Google Scholar

[6] H. Inokawa and H. Satoh, Japanese Patent JP2009238940. (2009).

Google Scholar

[7] T. Ishi, J. Fujikata, K. Makita, T. Baba and K. Ohashi: Jpn. J. Appl. Phys. Vol. 44 (2005), p. L 364.

Google Scholar

[8] H. Satoh and H. Inokawa: 2008 Int. Conf. Solid State Devices and Materials (SSDM) Extended Abstracts (2008), p.286.

Google Scholar

[9] R.J. Schoelkopf, P. Wahlgren, A.A. Kozhevnikov, P. Delsing, D.E. Prober: Science, Vol. 280 (1998), p.1238.

Google Scholar

[10] Information on http: /www. synopsys. com.

Google Scholar

[11] Information on http: /www. mosis. com/test.

Google Scholar

[12] H. Satoh, Y. Matsuo, H. Inokawa and A. Ono: submitted to Advanced Materials Research (2011).

Google Scholar

[13] A. Ono, H. Satoh and H. Inokawa: submitted to Advanced Materials Research (2011).

Google Scholar