Characterization of CNx/Si Using RBS, NRA and AES Techniques

M. Siad; Samira Abdelli-Messaci; Tahar  Kerdja; Slimane Lafane; M. Abdesselam

doi:10.4028/www.scientific.net/AMR.227.67

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Characterization of CN_x/Si Using RBS, NRA and AES Techniques
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 227Characterization of CNx/Si Using RBS, NRA and AES...

Characterization of CN_x/Si Using RBS, NRA and AES Techniques

Abstract:

Carbon nitride films were synthesized by pulsed laser ablation of graphite target under nitrogen ambience. The third harmonic of a pulsed Nd-YAG laser of 355 nm wavelength and 7 ns pulse duration was focused onto a rotating target at an incidence angle of 45°. The laser fluence at the target surface was set at 30 J/cm2. The carbon nitride films were deposited on (100) silicon substrate kept at room temperature and placed at a distance of 40 mm from the target surface. The CNx films were grown under N2 gas in the pressure range of 5×10-3 to 4×10-1 mbar. The deposited films composition was investigated by different techniques RBS, NRA and AES. We found an N/C ratio equal to 0.4 in the pressure range cited above.

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Advanced Materials Research (Volume 227)

Pages:

67-71

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.227.67

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Online since:

April 2011

Authors:

M. Siad, Samira Abdelli-Messaci, Tahar Kerdja, Slimane Lafane, M. Abdesselam

Keywords:

AES, Carbon Nitride, NRA, Pulsed Laser Deposition (PLD), RBS, Thin Film

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