Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography

Abstract:

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The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.

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Periodical:

Edited by:

Lynn Khine and Julius M. Tsai

Pages:

132-135

DOI:

10.4028/www.scientific.net/AMR.254.132

Citation:

N. Puttaraksa et al., "Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography", Advanced Materials Research, Vol. 254, pp. 132-135, 2011

Online since:

May 2011

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$35.00

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