Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography
The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.
Lynn Khine and Julius M. Tsai
N. Puttaraksa et al., "Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography", Advanced Materials Research, Vol. 254, pp. 132-135, 2011