Electrical Behaviors of LEDs Prepared by Wide-Band GaN Material

Abstract:

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Electrical behaviors of light-emitting diodes (LEDs) prepared by wide-band GaN material were measured accurately using alternating-current (AC) small-signal together with an I-V plot. An abnormal negative capacitance (NC) was observed in all measurend LEDs, and at the same voltage the lower the frequency is, the more obvious NC is. Form the slopes of ln(I)-V plot and the relation between NC and voltage the ideality factor was approximately obtained.

Info:

Periodical:

Advanced Materials Research (Volumes 284-286)

Main Theme:

Edited by:

Xiaoming Sang, Pengcheng Wang, Liqun Ai, Yungang Li and Jinglong Bu

Pages:

2202-2206

DOI:

10.4028/www.scientific.net/AMR.284-286.2202

Citation:

Y. Li et al., "Electrical Behaviors of LEDs Prepared by Wide-Band GaN Material", Advanced Materials Research, Vols. 284-286, pp. 2202-2206, 2011

Online since:

July 2011

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Price:

$35.00

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