Electrical Behaviors of LEDs Prepared by Wide-Band GaN Material

Yang Li; Ding Li; Cun Da Wang; Lie Feng Feng

doi:10.4028/www.scientific.net/AMR.284-286.2202

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 284-286Electrical Behaviors of LEDs Prepared by Wide-Band...

Electrical Behaviors of LEDs Prepared by Wide-Band GaN Material

Abstract:

Electrical behaviors of light-emitting diodes (LEDs) prepared by wide-band GaN material were measured accurately using alternating-current (AC) small-signal together with an I-V plot. An abnormal negative capacitance (NC) was observed in all measurend LEDs, and at the same voltage the lower the frequency is, the more obvious NC is. Form the slopes of ln(I)-V plot and the relation between NC and voltage the ideality factor was approximately obtained.

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Advanced Materials Research (Volumes 284-286)

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2202-2206

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https://doi.org/10.4028/www.scientific.net/AMR.284-286.2202

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Online since:

July 2011

Authors:

Yang Li, Ding Li, Cun Da Wang, Lie Feng Feng

Keywords:

Ga N Material, Ideality Factor, Light Emitting Diode (LED), Negative Capacitance (NC)

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