Growth and Properties of Stannite-Quaternary Cu2ZnSnSe4 Thin Films Prepared by Selenization of Sputtered Binary Compound Precursors
Cu2ZnSnSe4 (CZTSe) thin films were grown on Corning glass 1737 by sequential methods of sputtering deposition and selenization process. As-grown films showed that elemental Cu, Zn, and Sn were in the nearly CZTSe stoichiometric ratio with Se-deficiency as detected by Energy Dispersive X-Ray spectrometry (EDX). In order to attain film stoichiometry, as-deposited films were subjected to selenization process in tube furnace under Ar ambient at different selenization temperatures for 10-60 min. It was found that compositions of binary compound in the sputtering target as well as selenization are critical for the growth of the CZTSe films. The structural characteristics of the selenized CZTSe films revealed a highly oriented stannite CZTSe phase with (112), (220/204) and (312/116) growth orientations and a CuSe secondary phase. By using 0.5% KCN solution, CuSe secondary phase could be totally etched from the CZTSe film surface.
Deliang Zhang, Kim Pickering, Brian Gabbitas, Peng Cao, Alan Langdon, Rob Torrens and Johan Verbeek
R. A. Wibowo et al., "Growth and Properties of Stannite-Quaternary Cu2ZnSnSe4 Thin Films Prepared by Selenization of Sputtered Binary Compound Precursors", Advanced Materials Research, Vols. 29-30, pp. 79-82, 2007