Heteroepitaxy of ZnO Films on Epi-GaN/Al2O3(0001) by MOCVD

Qiao Qun Yu; Jin Ma; Cai Na Luan; Ling Yi Kong; Zhen Zhu

doi:10.4028/www.scientific.net/AMR.299-300.444

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 299-300Heteroepitaxy of ZnO Films on Epi-GaN/Al2O3(0001)...

Heteroepitaxy of ZnO Films on Epi-GaN/Al₂O₃(0001) by MOCVD

Abstract:

Single crystalline ZnO thin films have been deposited on epi-GaN/sapphire (0001) substrates by the metalorganic chemical vapour deposition (MOCVD) method. The structural and optical properties of the ZnO films were investigated in detail. The film prepared at 600°C was epitaxial single crystalline with the wurtzite structure of pure ZnO and a single orientation of (0002) direction. High-resolution transmission electron microscopy was used to investigate the interface area, and a clear orientation relationship of ZnO (0001) || GaN (0001) and ZnO [] || GaN [] was obtained. The average transmittance for the samples in the visible range was over 75%.

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Advanced Materials Research (Volumes 299-300)

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444-447

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https://doi.org/10.4028/www.scientific.net/AMR.299-300.444

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Online since:

July 2011

Authors:

Qiao Qun Yu, Jin Ma, Cai Na Luan, Ling Yi Kong, Zhen Zhu

Keywords:

MOCVD, Single Crystalline, Structure, ZnO Film

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