Heteroepitaxy of ZnO Films on Epi-GaN/Al2O3(0001) by MOCVD

Abstract:

Article Preview

Single crystalline ZnO thin films have been deposited on epi-GaN/sapphire (0001) substrates by the metalorganic chemical vapour deposition (MOCVD) method. The structural and optical properties of the ZnO films were investigated in detail. The film prepared at 600°C was epitaxial single crystalline with the wurtzite structure of pure ZnO and a single orientation of (0002) direction. High-resolution transmission electron microscopy was used to investigate the interface area, and a clear orientation relationship of ZnO (0001) || GaN (0001) and ZnO [] || GaN [] was obtained. The average transmittance for the samples in the visible range was over 75%.

Info:

Periodical:

Advanced Materials Research (Volumes 299-300)

Edited by:

Jianzhong Wang and Jingang Qi

Pages:

444-447

DOI:

10.4028/www.scientific.net/AMR.299-300.444

Citation:

Q. Q. Yu et al., "Heteroepitaxy of ZnO Films on Epi-GaN/Al2O3(0001) by MOCVD", Advanced Materials Research, Vols. 299-300, pp. 444-447, 2011

Online since:

July 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.