Investigation of Intersubband Transition in GaAs/AlGaAs Quantum Well Infrared Photodetectors

Abstract:

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We report the design, characterization and fabrication of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) to achieve intersubband transitions at expected long wavelengths. With eight-band k·p model, we calculated the E2-E1 transition energies of GaAs/Al0.25Ga0.75As QWs with the different well widths. According to the calculation, we designed a QWIP with the estimated detection wavelength around 9 μm. The actual device structure parameters, such as well width and Al composition, were confirmed by the XRD measurements. The absorption peak at 9.46 μm and the peak responsivity at 8.7 μm are obtained, which are very close to the simulation results.

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Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

105-107

DOI:

10.4028/www.scientific.net/AMR.31.105

Citation:

D.S. Li et al., "Investigation of Intersubband Transition in GaAs/AlGaAs Quantum Well Infrared Photodetectors", Advanced Materials Research, Vol. 31, pp. 105-107, 2008

Online since:

November 2007

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$35.00

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