Growth of GaN Nano-Column on Si (111) Substrate Using Au+Ga Alloy Seeding by Pulsed Flow Method Using MOCVD

Abstract:

Vertical GaN nano-columns arrays were grown on Au-coated silicon (111) substrate by Au+Ga alloy seeding method and pulsed flow of Gallium and ammonia using metalorganic chemical vapor deposition (MOCVD). A gold thin film was deposited on Si using an ion coating system. The Au coated Si substrate was annealed at 800 oC under hydrogen ambient for 5 min. The pre-deposition of gallium and nitrogen was performed for 60 sec to form Au+Ga and nitrogen solid solution, which acts as the initial nucleation islands. Then Gallium and ammonia were let in pulse method. Scanning electron microscopy (SEM) image reveals a vertical growth and cylindrical in shape GaN nano-column. From the sharp PL peak intensity it is clearly seen that the dislocation density is reduced considerably and the optical quality of the nano-column is improved.

• Periodical: Advanced Materials Research (Volume 31)
• Pages: 108-110
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.31.108
• Online since: November 2007
• Authors: Jae Chul Song, D.H. Kang, Seon Ho Lee, Eun Su Jang, Dong Wook Kim, Kannappan Santhakumar, Cheul Ro Lee
• Keywords: Au Coating, Gallium Nitride (GaN), MOCVD, Nanocolumn, Pulse Flow, Silicon Substrates

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