Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

B. Dong; W.J. Fan; Y.X. Dang

doi:10.4028/www.scientific.net/AMR.31.95

Paper Titles

Defect Mediated Photonic Behavior of ZnO Nanocrystals
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Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering
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Photoluminescence and Fractal Properties of Diverse Carbothermal Zinc Oxide Nanostructures
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Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser
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Fabrication of Photonic Crystals by Holographic Lithography Method
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Optical and Structural Properties of Multi Deposition Film Derived SiO₂-TiO₂ Systems by Sol-Gel Process
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Investigation of Intersubband Transition in GaAs/AlGaAs Quantum Well Infrared Photodetectors
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Growth of GaN Nano-Column on Si (111) Substrate Using Au+Ga Alloy Seeding by Pulsed Flow Method Using MOCVD
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Band Structure and Optical Gain of 1.3 um...

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

Abstract:

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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Periodical:

Advanced Materials Research (Volume 31)

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95-97

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.95

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Online since:

November 2007

Authors:

B. Dong, W.J. Fan, Y.X. Dang

Keywords:

Band Structure, Compressively Strained, Optical Gain, Quantum Well

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