[1]
J.M. Garcia, et al., J. Crystal Growth, 227-228 (2001).
Google Scholar
[2]
S. Watanabe et. al, Phys. Rev. B. 68, 193304 (2003).
Google Scholar
[3]
Brault J, et al., Journal of Applied Physics, Vol 92, No. 1, July (2006).
Google Scholar
[4]
Sun ZZ, et al., Applied Physics Letters , Vol 85, No. 21, 5061-3, November (2004).
Google Scholar
[5]
FA Zhao, YH Chen, XL Ye, et al., Journal of Crystal Growth, 273 (2005) 494-499.
Google Scholar
[6]
Ponchet A, et al., Journal of Microelec., 26, 783, (1995).
Google Scholar
[7]
Yong Zhang, et al., Phys. Rev. B. Vol. 51, No. 19 (1995).
Google Scholar
[8]
Zhang SB and Zunger A, Physical Review B, vol 53, 1343 , (1996).
Google Scholar
[9]
Ogura M, Sugiyama Y, and Sugaya T, Applied Physics Letters Volume 79, Number 3, 2001, pp.371-3.
Google Scholar
[10]
M. Schmidbauer, et. al., Physical Review Letters, 96, 066108, (2006).
Google Scholar
[11]
Lei W, et al., Applied Physics Letters, Vol 88, 063114, 2006 0 1 2 3 4 5 6 7 10000 10500 11000 11500 12000 12500 13000 13500 14000 wavelength (Angstrom) Intensity a b c 10K PL 3ML InAs dots 0 5 10 15 20 25 10000 11000 12000 13000 14000 wavelength (angstrom) Intensity (a. u) (a) (b).
Google Scholar