Nitrogen Interstitial Defects in GaNAs Films Grown by MOCVD

Deny Sentosa; Xiao Hong Tang; Soo Jin Chua; Zong You Yin

doi:10.4028/www.scientific.net/AMR.31.77

Paper Titles

The Study of Femto-Second Laser Induced Damage Threshold on Semi-Insulating GaAs Wafer
p.65

Temperature-Controlled Catalytic Growth and Photoluminescence Properties of ZnO Nanostructures
p.68

Fabrication and Optical Properties of ZnO Quantum Dots
p.71

Intense Photoluminescence and Photoluminescence Enhancement of Silicon Nanocrystals by Ultraviolet Irradiation
p.74

Nitrogen Interstitial Defects in GaNAs Films Grown by MOCVD
p.77

Influence of Hydrogen Dilution of Silane on the Properties of nc-Si:H Films Grown by Layer-by-Layer Deposition Technique
p.80

Defect Mediated Photonic Behavior of ZnO Nanocrystals
p.83

Surface Structure Dependent Growth of InAs/InAlAs Quantum Wires on InP(100).
p.86

Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering
p.89

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Nitrogen Interstitial Defects in GaNAs Films Grown...

Nitrogen Interstitial Defects in GaNAs Films Grown by MOCVD

Abstract:

Photoluminescence (PL) measurement shows an additional peak with stronger and broader emission at lower photon energy besides the energy band gap transition emission from GaNAs epilayer grown by MOCVD. This emission is assigned as nitrogen-nitrogen interstitial defect related emission. Effect of V/III ratio during the MOCVD growth on this defect related emission peak has been investigated. The combination of optimum V/III ratio during the MOCVD growth and post-growth rapid thermal anneal (RTA) can eliminate this defect emission peak and at the same time the GaNAs’ band gap emission has been greatly improved. The PL spectra contain a single, narrow, and high intensity GaNAs’ band gap transition emission after the RTA annealing. The optimum V/III ratio for growing the GaNAs films with N content < 3.5% is around 20.

You might also be interested in these eBooks

Semiconductor Photonics: Nano-Structured Materials and Devices

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 31)

Pages:

77-79

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.77

Citation:

Cite this paper

Online since:

November 2007

Authors:

Deny Sentosa, Xiao Hong Tang, Soo Jin Chua, Zong You Yin

Keywords:

GaNAs, MOCVD, Photoluminescence (PL), Thermal Annealing

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] W. G. Bi, C. W. Tu, Appl. Phys. Lett 70 (1608) (1997).

Google Scholar

[2] X. Tang, D. Sentosa, The 13 th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII) (2006).

Google Scholar

[3] D. Sentosa, X. Tang, S. J. Chua, Z. Yin, E-MRS Spring Meeting (2007).

Google Scholar

[4] D. Sentosa, X. Tang, S. J. Chua, Z. Yin, paper under submission (2007).

Google Scholar

[5] J. Toivonen, J. Oila, K. Saarinen, T. Hakkarainen, M. Sopanen, H. Lipsanen, IEEE 2002. Fig. 3 30-K PL spectrum of the GaNAs sample with 3% nitrogen content (Sample 2) after thermal annealing.

Google Scholar